Zobrazeno 1 - 10
of 188
pro vyhledávání: '"Huilong Zhu"'
Autor:
Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong Zheng
Publikováno v:
Nanomaterials, Vol 13, Iss 12, p 1867 (2023)
At sub-3 nm nodes, the scaling of lateral devices represented by a fin field-effect transistor (FinFET) and gate-all-around field effect transistors (GAAFET) faces increasing technical challenges. At the same time, the development of vertical devices
Externí odkaz:
https://doaj.org/article/94b5062252864711b56688868cb09bee
Autor:
Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong Zheng
Publikováno v:
Nanomaterials, Vol 13, Iss 11, p 1786 (2023)
Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F2 DRAM cell transistors (F = pitch/2). Most vertical devices are facing some technical challenges
Externí odkaz:
https://doaj.org/article/c4259ceaf8894f1db0a706cb9a310538
Autor:
Chen Li, Hongxiao Lin, Junjie Li, Xiaogen Yin, Yongkui Zhang, Zhenzhen Kong, Guilei Wang, Huilong Zhu, Henry H. Radamson
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-12 (2020)
Abstract Vertical gate-all-around field-effect transistors (vGAAFETs) are considered as the potential candidates to replace FinFETs for advanced integrated circuit manufacturing technology at/beyond 3-nm technology node. A multilayer (ML) of Si/SiGe/
Externí odkaz:
https://doaj.org/article/8b11493489934fcb81ee73ac7e1d9d85
Autor:
Weixing Huang, Huilong Zhu, Zhenhua Wu, Xiaogen Yin, Qiang Huo, Kunpeng Jia, Yangyang Li, Yongkui Zhang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 879-884 (2020)
In this study, the negative DIBL (N-DIBL), negative differential resistance (NDR), and Miller effect of a negative capacitance nanowire filed-effect-transistor (negative capacitance (NC) NWFET) were analyzed by employing the custom-built SPICE model.
Externí odkaz:
https://doaj.org/article/307c1eaab704467ba5f2bf88741a7fbc
Autor:
Yan Wang, Yuanjun Ma, Jinping Shi, Xiangyu Yan, Jun Luo, Huilong Zhu, Kunpeng Jia, Juan Li, Can Yang Zhang
Publikováno v:
Frontiers in Chemistry, Vol 8 (2020)
Molybdenum disulfide (MoS2), a transition metal dichalcogenide material, possesses great potential in biomedical applications such as chemical/biological sensing, drug/gene delivery, bioimaging, phototherapy, and so on. In particular, monolayer MoS2
Externí odkaz:
https://doaj.org/article/d68ba72578ae457588d11d47c8cd351b
Autor:
Yangyang Li, Huilong Zhu, Zhenzhen Kong, Yongkui Zhang, Xuezheng Ai, Guilei Wang, Qi Wang, Ziyi Liu, Shunshun Lu, Lu Xie, Weixing Huang, Yongbo Liu, Chen Li, Junjie Li, Hongxiao Lin, Jiale Su, Chuanbin Zeng, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 11, Iss 5, p 1209 (2021)
Gate-all-around (GAA) field-effect transistors have been proposed as one of the most important developments for CMOS logic devices at the 3 nm technology node and beyond. Isotropic etching of silicon–germanium (SiGe) for the definition of nano-scal
Externí odkaz:
https://doaj.org/article/4dcf8caf58a342eda355502ff25c8f9e
Autor:
Lu Xie, Huilong Zhu, Yongkui Zhang, Xuezheng Ai, Junjie Li, Guilei Wang, Anyan Du, Zhenzhen Kong, Qi Wang, Shunshun Lu, Chen Li, Yangyang Li, Weixing Huang, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 11, Iss 6, p 1408 (2021)
For the formation of nano-scale Ge channels in vertical Gate-all-around field-effect transistors (vGAAFETs), the selective isotropic etching of Ge selective to Ge0.8Si0.2 was considered. In this work, a dual-selective atomic layer etching (ALE), incl
Externí odkaz:
https://doaj.org/article/c3946f00178944e3bf76c4c152fd2b6c
Autor:
Guilei Wang, Jun Luo, Jinbiao Liu, Tao Yang, Yefeng Xu, Junfeng Li, Huaxiang Yin, Jiang Yan, Huilong Zhu, Chao Zhao, Tianchun Ye, Henry H. Radamson
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Abstract In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH4 and B2H6 precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobilit
Externí odkaz:
https://doaj.org/article/f7903226aa7c4cd2892530233880ab63
Publikováno v:
Applied Sciences, Vol 10, Iss 18, p 6610 (2020)
The wear rate and dissipation energy during tension–torsion cyclic loading of steel wires with fretting contact in different environmental media were explored in this study. Hysteresis loops of tangential force versus displacement amplitude (Ft-D)
Externí odkaz:
https://doaj.org/article/34b35ec5e7604e15b6fa167411814a9e
Autor:
Henry H. Radamson, Huilong Zhu, Zhenhua Wu, Xiaobin He, Hongxiao Lin, Jinbiao Liu, Jinjuan Xiang, Zhenzhen Kong, Wenjuan Xiong, Junjie Li, Hushan Cui, Jianfeng Gao, Hong Yang, Yong Du, Buqing Xu, Ben Li, Xuewei Zhao, Jiahan Yu, Yan Dong, Guilei Wang
Publikováno v:
Nanomaterials, Vol 10, Iss 8, p 1555 (2020)
The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s tr
Externí odkaz:
https://doaj.org/article/1e19463b7889450dac09ad0268d34ded