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Akademický článek

High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

Autor: Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong Zheng

Publikováno v: Nanomaterials, Vol 13, Iss 12, p 1867 (2023)

At sub-3 nm nodes, the scaling of lateral devices represented by a fin field-effect transistor (FinFET) and gate-all-around field effect transistors (GAAFET) faces increasing technical challenges. At the same time, the development of vertical devices

Externí odkaz: https://doaj.org/article/94b5062252864711b56688868cb09bee

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Akademický článek

Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing

Autor: Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong Zheng

Publikováno v: Nanomaterials, Vol 13, Iss 11, p 1786 (2023)

Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F2 DRAM cell transistors (F = pitch/2). Most vertical devices are facing some technical challenges

Externí odkaz: https://doaj.org/article/c4259ceaf8894f1db0a706cb9a310538

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Akademický článek

Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application

Autor: Chen Li, Hongxiao Lin, Junjie Li, Xiaogen Yin, Yongkui Zhang, Zhenzhen Kong, Guilei Wang, Huilong Zhu, Henry H. Radamson

Publikováno v: Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-12 (2020)

Abstract Vertical gate-all-around field-effect transistors (vGAAFETs) are considered as the potential candidates to replace FinFETs for advanced integrated circuit manufacturing technology at/beyond 3-nm technology node. A multilayer (ML) of Si/SiGe/

Externí odkaz: https://doaj.org/article/8b11493489934fcb81ee73ac7e1d9d85

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Akademický článek

Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors

Autor: Weixing Huang, Huilong Zhu, Zhenhua Wu, Xiaogen Yin, Qiang Huo, Kunpeng Jia, Yangyang Li, Yongkui Zhang

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 8, Pp 879-884 (2020)

In this study, the negative DIBL (N-DIBL), negative differential resistance (NDR), and Miller effect of a negative capacitance nanowire filed-effect-transistor (negative capacitance (NC) NWFET) were analyzed by employing the custom-built SPICE model.

Externí odkaz: https://doaj.org/article/307c1eaab704467ba5f2bf88741a7fbc

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An umpolung strategy for chemically selective intermolecular cross-enolate-type coupling of N-alkenoxypyridinium salts with aldehydes

Autor: Guichao Dong, Mengfei Jiang, Nan Wu, Shengxiang Zhang, Huilong Zhu, Zhou Xu

Publikováno v: Chemical Communications. 59:3594-3597

Primary aldehydes are capable of cross-coupling with modified N-alkenoxyheteroarenium salts to construct C(sp3)–C(sp3) bonds with good chemical selectivity, offering structurally diverse 1,4-ketoaldehydes under metal-catalyst-free and ambient-tempe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::86920486d6bd35700ba21483dde3efb5
https://doi.org/10.1039/d3cc00422h

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Akademický článek

Surface Modification of Monolayer MoS2 by Baking for Biomedical Applications

Autor: Yan Wang, Yuanjun Ma, Jinping Shi, Xiangyu Yan, Jun Luo, Huilong Zhu, Kunpeng Jia, Juan Li, Can Yang Zhang

Publikováno v: Frontiers in Chemistry, Vol 8 (2020)

Molybdenum disulfide (MoS2), a transition metal dichalcogenide material, possesses great potential in biomedical applications such as chemical/biological sensing, drug/gene delivery, bioimaging, phototherapy, and so on. In particular, monolayer MoS2

Externí odkaz: https://doaj.org/article/d68ba72578ae457588d11d47c8cd351b

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A Novel 3D NOR Flash With Single-Crystal Silicon Channel: Devices, Integration, and Architecture

Autor: Weixing Huang, Huilong Zhu, Junjie Li, Zijin Yan, Yongkui Zhang, Qi Wang, Xuezheng Ai, Zhongrui Xiao, Zhenzhen Kong, Jinjuan Xiang, Jie Zhao, Zhenhua Wu, Junfeng Li, Jun Luo, Wenwu Wang, T. C. Ye

Publikováno v: IEEE Electron Device Letters. 43:1874-1877

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b55a82a2479d74f294a2aa8d101680ee
https://doi.org/10.1109/led.2022.3211174

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Akademický článek

pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology

Autor: Guilei Wang, Jun Luo, Jinbiao Liu, Tao Yang, Yefeng Xu, Junfeng Li, Huaxiang Yin, Jiang Yan, Huilong Zhu, Chao Zhao, Tianchun Ye, Henry H. Radamson

Publikováno v: Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)

Abstract In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH4 and B2H6 precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobilit

Externí odkaz: https://doaj.org/article/f7903226aa7c4cd2892530233880ab63

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