Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Huifan Xiong"'
Publikováno v:
Semiconductor Technology / Bandaoti Jishu; Jul2024, Vol. 45 Issue 7, p1-7, 7p
Autor:
Weiwei Mao, Can Cui, Huifan Xiong, Naifu Zhang, Shuai Liu, Maofeng Dou, Lihui Song, Deren Yang, Xiaodong Pi
Publikováno v:
Semiconductor Science and Technology.
Silicon carbide (SiC) is a typical wide band-gap semiconductor material, and exhibit excellent physical properties like high electron saturated drift velocity, high breakdown field, etc. SiC material contains many polytypes, among them, 4H-SiC is alm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ffe357b141deb72d3f59b9b97dbe1bf
https://doi.org/10.1088/1361-6641/acd4df
https://doi.org/10.1088/1361-6641/acd4df
Autor:
Huifan Xiong, Weiwei Mao, Rong Wang, Shuai Liu, Naifu Zhang, Lihui Song, Deren Yang, Xiaodong Pi
Publikováno v:
Materials Today Physics. 29:100906
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b0636a09047491bdd0a1448f6e70a9b
https://doi.org/10.1016/j.mtphys.2022.100906
https://doi.org/10.1016/j.mtphys.2022.100906