Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Huier Guo"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:21485-21494
CuSbS2 thin films were fabricated by spray pyrolysis from metal chloride aqueous solutions, followed by a post-deposition sulfurization step. The structural, chemical, optical and electrical properties of CuSbS2 and the effect of various sulfurizatio
Publikováno v:
Materials Science in Semiconductor Processing. 138:106304
Two-dimensional Indium selenide (2D In2Se3), a direct band gap semiconductor in group III-VI, shows a potential application in constructing novel photodetectors with broadband spectral response. The device performances of these In2Se3-based photodete
Publikováno v:
Ceramics International. 44:16092-16098
In this work, we report an electrodeposition technique for fabricating chalcopyrite phase CuInSe 2 (CISe) thin films and demonstrate the great prospect of CISe films for serving as efficient counter electrodes (CEs) in quantum dot sensitized solar ce
Autor:
Zhen Cheng, Shiwang Zhang, Xi Yang, Xinnian Liu, Ru Zhou, Haihong Niu, Wan Lei, Xiaoli Mao, Liangcheng Liu, Huier Guo, Liusen Hu
Publikováno v:
Materials Science in Semiconductor Processing. 124:105613
The catalytic activity and charge transport characteristics of counter electrodes exert a significant impact on the photovoltaic performance of quantum dot-sensitized solar cells (QDSCs). Layered metal chalcogenides have received particular interest
Publikováno v:
Journal of Power Sources. 333:107-117
PbS is a promising light harvester for near-infrared (NIR) responsive quantum dot (QD) photovoltaics due to its narrow bulk band gap (0.41 eV) and large exciton Bohr radius (18 nm). However, the relatively low conduction band (CB) and high-density su
Publikováno v:
Ceramics International. 42:12194-12201
TiO 2 nanoparticles are typically employed to construct the porous films for quantum dot-sensitized solar cells (QDSCs). However, undesirable interface charge recombination at grain boundaries would hinder the efficient electron transport to the cond
Autor:
Zhang Zihan, Yongqiang Yu, Jiajun Cai, Chunyan Wu, Jiansheng Jie, Huier Guo, Qiang Peng, Xiwei Zhang, Li Wang
Publikováno v:
Frontiers of Optoelectronics in China. 4:161-165
Sliver doped n-type CdS nanoribbons (NRs) were successfully synthesized by using Ag2S as the dopant via a thermal co-evaporation method. The CdS:Ag NRs have wurtzite single-crystal structure with growth direction of [110]. Significantly, the conducti
Autor:
Xiwei Zhang, Jiajun Cai, Huier Guo, Yongqiang Yu, Chunyan Wu, Jiansheng Jie, Yang Jiang, Li Wang, Qiang Peng, Di Wu
Publikováno v:
Nanotechnology. 21:505203
Cl-doped n-type CdS NWs with single-crystal wurtzite structure and [Formula: see text] growth direction were synthesized by using CdCl(2) as the dopant via a thermal co-evaporation method. By controlling the Cl vapor pressure during the growth, the c
Autor:
Jiansheng Jie, Li Wang, Di Wu, Yang Jiang, Xiwei Zhang, Zhizhong Hu, Chunyan Wu, Zhi Wang, Yongqiang Yu, Qiang Peng, Huier Guo
Publikováno v:
Nanotechnology. 21:285206
Coaxial ZnSe/Si nanocables were successfully produced by a simple two-step growth method. ZnSe nanowire cores were first synthesized by thermal evaporation and then followed by the chemical vapor deposition (CVD) growth of Si shells. The former have
Autor:
Chunyan Wu, Jiansheng Jie, Li Wang, Yongqiang Yu, Qiang Peng, Xiwei Zhang, Jiajun Cai, Huier Guo, Di Wu and, Yang Jiang
Publikováno v:
Nanotechnology; Feb2011, Vol. 22 Issue 6, p069801-069801, 1p