Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Hui-Ying Siao"'
Autor:
Fu-Xiang Rikudo Chen, Chia-Yu Lin, Hui-Ying Siao, Cheng-Yuan Jian, Yong-Cheng Yang, Chun-Liang Lin
Publikováno v:
Scientific Data, Vol 10, Iss 1, Pp 1-9 (2023)
Abstract Defects to popular two-dimensional (2D) transition metal dichalcogenides (TMDs) seriously lower the efficiency of field-effect transistor (FET) and depress the development of 2D materials. These atomic defects are mainly identified and resea
Externí odkaz:
https://doaj.org/article/8540d9fe21b747fdbf9a233fe22b5db3
Publikováno v:
Journal of Electronic Materials. 49:3435-3440
Gallium phosphide (GaP) solar cell structures with improved quantum efficiencies were realized using a modified liquid phase epitaxy (LPE) technique and diodes formed using semi-transparent Schottky contacts. The improvement is due to the addition of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b6d9a60c9e8ee360415e8a4e10c4bf1
https://doi.org/10.1007/s11664-019-07848-6
https://doi.org/10.1007/s11664-019-07848-6