Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hui Tae Kwon"'
Publikováno v:
IEEE Access, Vol 10, Pp 109760-109767 (2022)
Resistive random-access memory (RRAM) has been explored to implement neuromorphic systems to accelerate neural networks. In this study, an RRAM crossbar array using parylene C (PPXC) as both a resistive switching layer and substrate was fabricated. P
Externí odkaz:
https://doaj.org/article/2301ee0632154f5c90d9b8f67fd511a5
Autor:
Hui Tae Kwon, Yu Jeong Park, Min-Hwi Kim, Hyun-Seok Choi, Boram Kim, Sungjun Kim, Daehoon Wee, Won Joo Lee, Byung-Gook Park, Yoon Kim
Publikováno v:
Solid-State Electronics. 158:64-69
Resistive random-access memory (RRAM) with a Ni/SiNx/a-Si/p+-Si structure is presented. In contrast to RRAM devices based on high-k materials, the proposed Si-based device is more attractive and promising because the SiNx and a-Si layers have full co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ef884417fd5382dc5e02a8925156005
https://doi.org/10.1016/j.sse.2019.05.014
https://doi.org/10.1016/j.sse.2019.05.014
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 19:63-68
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed52ca42c72f2c932969f7b58706acdc
https://doi.org/10.5573/jsts.2019.19.1.063
https://doi.org/10.5573/jsts.2019.19.1.063
Autor:
Hyun-Seok Choi, Won Joo Lee, Yu Jeong Park, Byung-Gook Park, Daehoon Wee, Boram Kim, Jong-Ho Lee, Hui Tae Kwon, Yoon Kim
Publikováno v:
IEEE Transactions on Electron Devices. 66:420-427
This paper proposes a synaptic device based on charge-trap flash memory that has good CMOS compatibility and superior reliability characteristics compared with other synaptic devices. Using hot-electron injection and hot-hole injection, we designed o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::072e295247d3932a14ad10ae593f8e09
https://doi.org/10.1109/ted.2018.2881972
https://doi.org/10.1109/ted.2018.2881972
Publikováno v:
Journal of nanoscience and nanotechnology. 19(10)
In this paper, a novel structure of tunnel field-effect transistors (TFETs) is proposed. The proposed device has an intrinsic polysilicon layer located in the overlap region between the source and the gate, which can increase the tunneling area and o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf7063956949ed84532755778d018732
https://pubmed.ncbi.nlm.nih.gov/31027017
https://pubmed.ncbi.nlm.nih.gov/31027017
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 16:635-640
Tunnel field-effect transistor (TFET) is a promising candidate for the next-generation electron device. However, technical issues remain for their practical application: poor current drivability, short-channel effect and ambipolar behavior. We propos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7146b84d2c0663b4a7544555f0b4ee3
https://doi.org/10.5573/jsts.2016.16.5.635
https://doi.org/10.5573/jsts.2016.16.5.635