Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Hui Jin Looi"'
Gold is expected to form a relatively low barrier on hydrogenated thin film diamond, and this metallisation has therefore been widely used as the ‘ohmic’ contact for electronic devices fabricated using this material. However, gold contacts are no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2909e60eb486be2521d074f4dcce75c
https://doi.org/10.1016/s0925-9635(00)00240-5
https://doi.org/10.1016/s0925-9635(00)00240-5
Autor:
John S. Foord, Hui Jin Looi, F.H. Jones, Richard B. Jackman, Andrew B. Molloy, Lisa Y.S. Pang, Michael D. Whitfield
It has been known for some time that hydrogen within the bulk of diamond increases the conductivity of the material. However, only recently did it become apparent that the surface of thin film diamond can display p-type conductivity and that this too
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::291a29cf9b3efacf89ebf1e39725783c
https://ora.ox.ac.uk/objects/uuid:3654aac1-c38f-42c5-bdbd-7cb6ff473b3a
https://ora.ox.ac.uk/objects/uuid:3654aac1-c38f-42c5-bdbd-7cb6ff473b3a
Publikováno v:
Carbon. 37:817-822
Early predictions that diamond would be a suitable material for high-performance high-power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin-film material. In this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::309eec046a600e50ada174a05983a8e6
https://doi.org/10.1016/s0008-6223(98)00277-2
https://doi.org/10.1016/s0008-6223(98)00277-2
Publikováno v:
Diamond and Related Materials. 8:946-951
Thin film diamond photodetectors are one of the most promising classes of diamond devices for commercial exploitation. Already, photoconductive devices which display extremely high levels of selectivity between deep UV and visible light, allied to go
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a663b93e65fdf0d7917b0be55ff7e69
https://doi.org/10.1016/s0925-9635(98)00423-3
https://doi.org/10.1016/s0925-9635(98)00423-3
Publikováno v:
Scopus-Elsevier
Early predictions that diamond would be a suitable material for high performance, high power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin film material. In thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a3b1c396e3aebfee45898e608dea1a8
https://doi.org/10.1016/s0925-9635(98)00419-1
https://doi.org/10.1016/s0925-9635(98)00419-1
Autor:
Richard B. Jackman, Olivier Gaudin, Stephen Watson, Michael D. Whitfield, Stuart P. Lansley, Hui Jin Looi
Publikováno v:
Diamond and Related Materials. 8:886-891
The realisation of effective UV photodetectors from thin-film diamond requires the selection of good-quality substrate material and careful device design. However, these alone are insufficient to yield high-performance characteristics: post-growth tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfdc14392a983b88f3bd94f3cdd46528
https://doi.org/10.1016/s0925-9635(98)00292-1
https://doi.org/10.1016/s0925-9635(98)00292-1
High-performance metal-semiconductor field effect transistors from thin-film polycrystalline diamond
Publikováno v:
Diamond and Related Materials. 7:565-568
Polycrystalline CVD diamond films with a near-surface hydrogenated layer have been used to form the first normally off enhancement mode MESFET structures from this material. A room temperature transconductance of 0.14 mS mm −1 has been measured, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eadd6b3e53993779f1c78205844ab67
https://doi.org/10.1016/s0925-9635(97)00273-2
https://doi.org/10.1016/s0925-9635(97)00273-2
Publikováno v:
Scopus-Elsevier
Diamond containing hydrogen at or near the surface displays p-type conductivity. The origin of this effect has been controversial. We have used I-V, Hall effect, SIMS, Raman, UPS and XPS to study hydrogenated polycrystalline CVD diamond films. The di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e57ec0e8601636262fe1c0b1bba107f
https://doi.org/10.1016/s0925-9635(97)00252-5
https://doi.org/10.1016/s0925-9635(97)00252-5
Publikováno v:
Applied Physics Letters. 74:3332-3334
A metal–semiconductor–metal Schottky barrier photodetector has been fabricated on a “hydrogen-doped” surface-conducting chemical vapor deposition (CVD) diamond. The device is fabricated in one step by forming two back-to-back aluminum Schottk
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7077e1a9a261542c9f42269498877b6
https://doi.org/10.1063/1.123335
https://doi.org/10.1063/1.123335
Publikováno v:
Applied Physics Letters. 74:615-617
A phototransistor fabricated from thin-film diamond is reported. Polycrystalline diamond grown by chemical vapor deposition, which is p-type by virtue of near-surface hydrogen, has been used to realize optically activated metal–semiconductor field-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d88f642693dd3b11cdf29d139f778b20
https://doi.org/10.1063/1.123182
https://doi.org/10.1063/1.123182