Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Hugo Dewitte"'
Autor:
Hugo Dewitte, Philippe Paillet, Alexandre Le Roch, Serena Rizzolo, Claude Marcandella, Vincent Goiffon
Publikováno v:
IEEE Transactions on Nuclear Science. 69:1428-1436
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d50ef0b566579a0216ee5e308f669124
https://doi.org/10.1109/tns.2022.3150407
https://doi.org/10.1109/tns.2022.3150407
Autor:
Aubin Antonsanti, Cedric Virmontois, Jean-Marie Lauenstein, Alexandre Le Roch, Hugo Dewitte, Vincent Goiffon
Publikováno v:
IEEE Transactions on Nuclear Science. 69:1506-1514
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c785e4a03e999b4d968d90e2abb071c
https://doi.org/10.1109/tns.2022.3160056
https://doi.org/10.1109/tns.2022.3160056
Autor:
Cedric Virmontois, Alexandre Le Roch, Vincent Goiffon, Hugo Dewitte, Serena Rizzolo, Philippe Paillet, Claude Marcandella
Publikováno v:
IEEE Transactions on Nuclear Science. 69:290-298
The paper studies the radiation effects on the junction leakage random telegraph signal (JL-RTS). Using arrays of transistors, a statistical study of the phenomenon in MOSFETs source p-n junctions is performed and the impact of the electric field, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::984618cfc67b530253eaa5430e01452c
https://doi.org/10.1109/tns.2021.3119456
https://doi.org/10.1109/tns.2021.3119456
Autor:
Vincent Goiffon, Hugo Dewitte, P. Paillet, Serena Rizzolo, Antoine Jay, Anne Hémeryck, M. Jech, A. Le Roch
Publikováno v:
IEEE Electron Device Letters. 42:1650-1653
This letter presents an experimental study of the junction leakage RTS (JL-RTS) in a large set of MOSFET p-n junctions. Arrays of MOSFETs are used to statistically study the effects of the temperature, the electric field, and the source/drain design.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfcb4ea14f456b6db984f27428f322a5
https://doi.org/10.1109/led.2021.3112296
https://doi.org/10.1109/led.2021.3112296
Autor:
Vincent Goiffon, Hugo Dewitte, Philippe Paillet, Alexandre Le Roch, Claude Marcandella, Serena Rizzolo
Publikováno v:
IEEE Transactions on Nuclear Science. 68:697-706
This article investigates the effect of ultra-high total ionizing dose up to 450 Mrad(SiO2) on 180-nm MOSFETs for analog applications. In particular, it studies the influence of the transistor size, design, type, bias, and the annealing on radiation-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af79e55570a9623f29717ea44ad791cf
https://doi.org/10.1109/tns.2021.3065842
https://doi.org/10.1109/tns.2021.3065842
Autor:
Philippe Paillet, Olivier Marcelot, Alexandre Le Roch, Cedric Virmontois, Laura Mont Casellas, Marco Van Uffelen, Vincent Goiffon, Hugo Dewitte, Serena Rizzolo, Pierre Magnan, Jean-Marc Belloir
Publikováno v:
IEEE Transactions on Nuclear Science.
This work investigates the role of the phosphorus doping element in the radiation-induced dark current in a CMOS image sensor (CIS) photodiode. The neutron and proton irradiations on shallow arsenic-based photodiode CISs and deep phosphorus-based pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf52d82ff1f664182e286ea4e987c33a
https://oatao.univ-toulouse.fr/26850/
https://oatao.univ-toulouse.fr/26850/
Autor:
Jean-Reynald Macé, Sylvain Girard, Vincent Goiffon, Hugo Dewitte, Cyprien Muller, Timothe Allanche, Hortense Desjonqueres, Serena Rizzolo, Romain Molina, Jean-Pierre Baudu, Franck Corbière, A. Le Roch, Pierre Magnan, A. Saravia Flores, P. Paillet
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2020, 67 (7), pp.1284-1292. ⟨10.1109/TNS.2020.3001618⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2020, 67 (7), pp.1284-1292. ⟨10.1109/TNS.2020.3001618⟩
IEEE Transactions on Nuclear Science, 2020, 67 (7), pp.1284-1292. ⟨10.1109/TNS.2020.3001618⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2020, 67 (7), pp.1284-1292. ⟨10.1109/TNS.2020.3001618⟩
International audience; Capabilities of rad-hard electronics are often degraded by post-irradiation annealing, whose effects need to be considered in designing complex systems, such as CMOS image sensors (CISs). In particular, the commonly accepted b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d7680abf884d5df1eb8642f1cf6576e9
https://hal.science/hal-03192270
https://hal.science/hal-03192270
Autor:
Hugo, Dewitte
The GE1/1 project, which started in 2010, has for objective to install triple-GEM detectors -along with their acquisition chain- in the Compact Muons Solenoid (CMS), one of the 4 experiments of the Large Hadron Collider (LHC). This master thesis is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od________65::fc476e667f22e68de52d684afa2ebeed
http://cds.cern.ch/record/2290847
http://cds.cern.ch/record/2290847