Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Hugo Augustinus Joseph Cramer"'
Autor:
Elliott McNamara, Hammer Chang, Daoping Li, Hugo Augustinus Joseph Cramer, Isabel de la Fuente, Antonio Salerno, Zack Hsu, Alan Tai
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
In next generation Logic devices, overlay control requirements shrink to sub 2.5nm level on-product overlay. Historically on-product overlay has been defined by the overlay capability of after-develop in-scribe targets. However, due to design and dim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6213f6f21dc20988c00fcb3665b20e7
https://doi.org/10.1117/12.2297356
https://doi.org/10.1117/12.2297356
Autor:
Milos Popadic, Wade Huang, R.K. Jaganatharaja, Isabel de la Fuente, Ward Tu, Hugo Augustinus Joseph Cramer, Elliott Mc Namara, Rik van Laarhoven, Sharon Hsu, Filippo Belletti
Publikováno v:
SPIE Proceedings.
The logic manufacturing process requires small in-device metrology targets to exploit the full dose correction potential of the modern scanners and process tools. A high-NA angular resolved scatterometer (YieldStar S-1250D) was modified to demonstrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5f13a4efb8896028aa8ff347080ea4d
https://doi.org/10.1117/12.2260268
https://doi.org/10.1117/12.2260268
Autor:
Hans Van Der Laan, Hugo Augustinus Joseph Cramer, Peter Vanoppen, Martin Ebert, Gerbrand Van Der Zouw, Tjitte Nooitgedagt, Martin Jacobus Johan Jak
Publikováno v:
SPIE Proceedings.
Requirements for on-product overlay, focus and CD uniformity continue to tighten in order to support the demands of 10nm and 7nm nodes. This results in the need for simultaneously accurate, robust and dense metrology data as input for closed-loop con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acc6728393126463411cf0afafe2bbdb
https://doi.org/10.1117/12.2219946
https://doi.org/10.1117/12.2219946
Autor:
Moo-Young Seo, Dong-Gyu Park, Baukje Wisse, Yvon Chai, Jong-Mun Jeong, Jin-Moo Byun, Stefan Geerte Kruijswijk, Wei Guo, Hugo Augustinus Joseph Cramer, Thomas Theeuwes, Sharon Hsu, Steven Welch, Rui Zhang, Alok Verma, Giacomo Miceli, Sang-Hoon Jung, Rahul Khandelwal, Taeddy Kim, Hyun-Sok Kim, Yi Song, Kyu-Tae Sun
Publikováno v:
SPIE Proceedings.
The high-NA angle-resolved scatterometer YieldStar 1250D, with a small 12x12μm2 inspection area, has been used to inspect CD variation After Develop (ADI) and After Partition/Final Etch (APEI/AFEI) on various layers and features of a HVM DRAM proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee6ab7b87a96f62e6e077e7d07301ae
https://doi.org/10.1117/12.2220782
https://doi.org/10.1117/12.2220782
Autor:
Jongsu Lee, Steven Welch, Byounghoon Lee, Giacomo Miceli, Rui Zhang, Jin-Moo Byun, Stefan Geerte Kruijswijk, Sangjun Han, Noh-Jung Kwak, Kyu-Tae Sun, Won-Kwang Ma, Thomas Theeuwes, Young-Sik Kim, Sharon Hsu, Hugo Augustinus Joseph Cramer, Baukje Wisse, Yvon Chai, Yi Song, Alok Verma, Wei Guo
Publikováno v:
SPIE Proceedings.
Spacer multi patterning process continues to be a key enabler of future design shrinks in DRAM and NAND process flows. Improving Critical Dimension Uniformity (CDU) for main features remains high priority for multi patterning technology and requires
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::722c7c1779e899d45577382faa799c83
https://doi.org/10.1117/12.2219664
https://doi.org/10.1117/12.2219664
Autor:
Maryana Escalante Marun, Steven Welch, Frank Staals, Stuart Young, Stefan Geerte Kruijswijk, Stefan Petra, Bart Segers, Arie Jeffrey Den Boef, Bastiaan Onne Fagginger Auer, Wei Guo, Hugo Augustinus Joseph Cramer, Paul Christiaan Hinnen, Christian Marinus Leewis, Henk-Jan H. Smilde, Baukje Wisse
Publikováno v:
SPIE Proceedings.
The continuing trend of shrinking dimension and the related specifications requires tightening of control loops. To support the tighter control loops, the metrology sampling plans will require increasing sampling density and frequency. This study sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::543633219245caa6e295387c0d4b60ad
https://doi.org/10.1117/12.2085957
https://doi.org/10.1117/12.2085957
Autor:
Remco Dirks, Ethan Chiu, Henk Niesing, Baukje Wisse, Stefan Geerte Kruijswijk, Reinder Teun Plug, Bijoy Rajasekharan, Mariya Ponomarenko, Sylvia Yuan, Marlene Strobl, Platt Hung, Noelle Wright, Wilhelm Tsai, Vincent Couraudon, David Huang, Thomas M. Chen, Henry Chen, Paul K. L. Yu, Yi Song, Frida Liang, Andy Lan, Alan Wang, Wilson Hsu, Hugo Augustinus Joseph Cramer
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
Integrated metrology in the lithography cluster is a promising solution to tighten process control. It is shown that optical CD metrology using YieldStar, an angular resolved scatterometer, meets all requirements in terms of precision, process robust
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8494e48a6e6ed8de43718353dbe049e0
https://doi.org/10.1117/12.2047205
https://doi.org/10.1117/12.2047205
Autor:
Shaunee Cheng, Philippe Leray, Christine Corinne Mattheus, Hugo Augustinus Joseph Cramer, Henk Niesing, Anne-Laure Charley, Baukje Wisse, Wouter Pypen, Alok Verma, Stefan Geerte Kruijswijk
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
Monitoring and control of the various processes in the semiconductor require precise metrology of relevant features. Optical Critical Dimension metrology (OCD) is a non-destructive solution, offering the capability to measure profiles of 2D and 3D fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8c771e1f1cbda5897e0dcb84c700f73
https://doi.org/10.1117/12.2047280
https://doi.org/10.1117/12.2047280
Autor:
Jan Mulkens, Hans Van Der Laan, Michael Kubis, Kaustuve Bhattacharyya, Hugo Augustinus Joseph Cramer, Andre Engelen, Jos Benschop, Paul Christiaan Hinnen
Publikováno v:
SPIE Proceedings.
The overlay, CDU and focus requirements for the 20nm node can only be met using a holistic lithography approach whereby full use is made of high-order, field-by-field, scanner correction capabilities. An essential element in this approach is a fast,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::045ae872964e43ed9989dbd98d468f5e
https://doi.org/10.1117/12.2011507
https://doi.org/10.1117/12.2011507
Autor:
Chan-Ho Ryu, Hans Van Der Laan, Peter Ten Berge, Noelle Wright, Chang Moon Lim, Maryana Escalante Marun, Myoung-Soo Kim, Hugo Augustinus Joseph Cramer, Jongsu Lee, Birgitt Hepp, Hyosang Kang, Liesbeth Reijnen
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVI.
Improving Critical Dimension Uniformity (CDU) for spacer double patterning features is a high priority for double patterning technology. In spacer double patterning the gaps between the spacers are established through various processes (litho, etch,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ef1f7c5bd4e09f02957fafdd3715d77
https://doi.org/10.1117/12.917824
https://doi.org/10.1117/12.917824