Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Hugo Aramberri"'
Autor:
Haidong Lu, Dong-Jik Kim, Hugo Aramberri, Marco Holzer, Pratyush Buragohain, Sangita Dutta, Uwe Schroeder, Veeresh Deshpande, Jorge Íñiguez, Alexei Gruverman, Catherine Dubourdieu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract HfO2-based thin films hold huge promise for integrated devices as they show full compatibility with semiconductor technologies and robust ferroelectric properties at nanometer scale. While their polarization switching behavior has been widel
Externí odkaz:
https://doaj.org/article/4f5ee4837dbb4177a3443d1b75c52766
Autor:
Hugo Aramberri, Jorge Íñiguez
Publikováno v:
Communications Materials, Vol 4, Iss 1, Pp 1-8 (2023)
Abstract Hafnia ferroelectrics combine technological promise and remarkable behaviors. Their peculiarity stems from the many active extrinsic mechanisms that contribute to their properties and from a continuously growing number of novel intrinsic fea
Externí odkaz:
https://doaj.org/article/932f10fe5fe8451f98cc329a28310fd6
Autor:
Evgenios Stylianidis, Pranav Surabhi, Ruben Hamming‐Green, Mart Salverda, Yingfen Wei, Arjan Burema, Sylvia Matzen, Tamalika Banerjee, Alexander Björling, Binayak Mukherjee, Sangita Dutta, Hugo Aramberri, Jorge Íñiguez, Beatriz Noheda, Dina Carbone, Pavan Nukala
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)
Abstract Understanding various aspects of ferroelectricity in hafnia‐based nanomaterials is of vital importance for the development of future nonvolatile memory and logic devices. Here, the unconventional and weak electromechanical response of epit
Externí odkaz:
https://doaj.org/article/939962875502457fa0b937c3c10a3397
Publikováno v:
npj Computational Materials, Vol 7, Iss 1, Pp 1-10 (2021)
Abstract Lead zirconate (PbZrO3) is considered the prototypical antiferroelectric material with an antipolar ground state. Yet, several experimental and theoretical works hint at a partially polar behaviour in this compound, indicating that the polar
Externí odkaz:
https://doaj.org/article/ef6f3553d2aa4e88830cdc480443f0e0
Autor:
Sangita Dutta, Pratyush Buragohain, Sebastjan Glinsek, Claudia Richter, Hugo Aramberri, Haidong Lu, Uwe Schroeder, Emmanuel Defay, Alexei Gruverman, Jorge Íñiguez
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-10 (2021)
HfO2 is a promising ferroelectric material for applications in electronics but knowledge on its ferroic and electromechanical response properties is still lacking. Here, the authors demonstrate the peculiar piezoresponse of HfO2, predicting on how to
Externí odkaz:
https://doaj.org/article/6b302abdbcab462f9122a1397a3c7abb
Autor:
Hugo Aramberri, Jorge Íñiguez
Publikováno v:
Communications Materials, Vol 1, Iss 1, Pp 1-6 (2020)
Antiferroelectrics are technologically important for energy conversion and storage, but are relatively scarce. Here, first-principles calculations suggest that alkali vanadates are as yet undetected antiferroelectrics, offering routes to experimental
Externí odkaz:
https://doaj.org/article/ac91db61e91e4a2ba83018911eb68f53
Autor:
Fernando Gómez-Ortiz, Hugo Aramberri, Juan M. López, Pablo García-Fernández, Jorge Íñiguez, Javier Junquera
Publikováno v:
Physical Review B. 107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d967d7d489f0992cd4ff011c7da7fe5
https://doi.org/10.1103/physrevb.107.174102
https://doi.org/10.1103/physrevb.107.174102
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7212f9e3bb8b26f99470b5903197ffa
https://doi.org/10.1002/pssr.202300014
https://doi.org/10.1002/pssr.202300014
Autor:
F. Figueiras, Andrei L. Kholkin, Sangita Dutta, Hugo Aramberri, José Silva, Koppole C. Sekhar, Jorge Íñiguez, M. C. Istrate, Corneliu Ghica, Raluca Negrea
Publikováno v:
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Zirconia- and hafnia-based thin films have attracted tremendous attention in the past decade because of their unexpected ferroelectric behavior at the nanoscale, which enables the downscaling of ferroelectric devices. The present work reports an unpr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52e5968024493ef6aba62450e2229bc6
https://doi.org/10.1021/acsami.1c15875
https://doi.org/10.1021/acsami.1c15875
Publikováno v:
Science Advances. 8
The polarization response of antiferroelectrics to electric fields is such that the materials can store large energy densities, which makes them promising candidates for energy storage applications in pulsed-power technologies. However, relatively fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd2da4ac6abc20eef441bc9494a105db
https://doi.org/10.1126/sciadv.abn4880
https://doi.org/10.1126/sciadv.abn4880