Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Huey-Chiang Liou"'
Autor:
Y. L. Cheng, Ying-Lang Wang, Shao-Yu Chiu, Huey-Chiang Liou, M. S. Feng, You-Lin Wu, J. K. Lan, J.K Wang
Publikováno v:
Thin Solid Films. :776-780
The electrical performance of hydrogen silsesquioxane (HSQ) as the interlayer level dielectric (ILD) has been determined by using two-metal-layered test structures to study the impact of oxide liner thickness on the capacitance reduction. In comparis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc056f28ca0c55c96b0d8bd204edcd33
https://doi.org/10.1016/s0040-6090(00)01289-x
https://doi.org/10.1016/s0040-6090(00)01289-x
Publikováno v:
Thin Solid Films. 339:68-73
The thickness dependence of the anisotropy in thermal expansion of poly(pyromellitic dianhydride oxydianiline) (PMDA-ODA) with flexible chains and poly(biphenylene tetracarboxylic dianhydride p -phenylene diamine) (BPDA-PDA) ranging from 2.5 to 20 μ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e50906304d01cfbf0871216b8d714a7f
https://doi.org/10.1016/s0040-6090(98)01065-7
https://doi.org/10.1016/s0040-6090(98)01065-7
Autor:
John Pretzer, Huey-Chiang Liou
Publikováno v:
Thin Solid Films. 335:186-191
The mechanical properties and thermal stresses of hydrogen silsesquioxane (HSQ) thin films cured at different temperatures have been investigated by a nanoindentor and a profilometer. In this study, the correlations between structure change, SiH/S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64172d03b85cf80e994820d3ae22e273
https://doi.org/10.1016/s0040-6090(98)00881-5
https://doi.org/10.1016/s0040-6090(98)00881-5
Publikováno v:
Journal of Applied Polymer Science. 70:261-272
Three different semi-interpenetrating polymer network (semi-IPN) polyimide systems were prepared through blending in solution by using 2 different polyimides, BPDA–PDA and PMDA–ODA (E), and 2 different oligomers, bismaleimide (MDAB) and phenylthy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::371c499540c28b7f7bf951d2166ca0c7
https://doi.org/10.1002/(sici)1097-4628(19981010)70:2<261::aid-app6>3.0.co
https://doi.org/10.1002/(sici)1097-4628(19981010)70:2<261::aid-app6>3.0.co
Publikováno v:
Journal of Applied Polymer Science. 70:273-285
Three different semi-IPN polyimide systems were prepared through blending in solution by using two different polyimides, such as poly (p-phenylenebiphenyl tetracarbonyimide) (BPDA–PDA) and poly (4,4′-oxydiphylene pyromellitimide) [PMDA–ODA(E)],
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::331489c64f0dfc454b6ec92463c537f3
https://doi.org/10.1002/(sici)1097-4628(19981010)70:2<273::aid-app7>3.0.co
https://doi.org/10.1002/(sici)1097-4628(19981010)70:2<273::aid-app7>3.0.co
Publikováno v:
Thin Solid Films. 323:203-208
The out-of-plane elastic moduli of two polyimides, such as Poly(4,4′-oxydiphenylene pyromellitimide) (PMDA-ODA) with flexible chains and poly(p-phenylene biphenyl tetracarboximide) (BPDA-PDA) with rigid-rod-like chains, ranging from 4 to 20 μm hav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4285ed756b026b56200d964e41f9db17
https://doi.org/10.1016/s0040-6090(97)01024-9
https://doi.org/10.1016/s0040-6090(97)01024-9
Publikováno v:
Journal of Polymer Science Part B: Polymer Physics. 36:1383-1392
As the minimum features in semiconductor devices decrease, it is a new trend to incorporate copper and polymers with dielectric constant less than 3.0 to enhance the performance of the devices. Two fluorinated polymers, poly(biphenyl perfluorocyclobu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9d71311c7c62b609c6812d7d0c3e84c
https://doi.org/10.1002/(sici)1099-0488(199806)36:8<1383::aid-polb12>3.0.co
https://doi.org/10.1002/(sici)1099-0488(199806)36:8<1383::aid-polb12>3.0.co
Autor:
Wen-Li Wu, Huey-Chiang Liou
Publikováno v:
Thin Solid Films. 312:73-77
X-ray reflectivity was used to measure the coefficient of thermal expansion (CTE) and the density profile of hydrogen silsequioxane thin films deposited on silicon wafer substrates. This study has demonstrated that this technique is capable of measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dad1fe8a58d5e49f3beaad5057c6ffdf
https://doi.org/10.1016/s0040-6090(97)00587-7
https://doi.org/10.1016/s0040-6090(97)00587-7
Publikováno v:
MRS Proceedings. 767
The drive for improved performance of microelectronic devices has led to the prevalence of copper metallization and the aggressive development of low-permittivity (low-κ) dielectric materials for use as interlayer dielectrics in BEOL interconnect st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bb409edc2f9bfa023146c623fd6ad88
https://doi.org/10.1557/proc-767-f7.4
https://doi.org/10.1557/proc-767-f7.4
Autor:
J. K. Lan, Wen-Li Wu, M. S. Feng, C. G. Chao, Y. L. Cheng, B. M. Fanconi, Hae-Jeong Lee, Y. L. Wang, E. K. Lin, Huey-Chiang Liou
Publikováno v:
MRS Proceedings. 714
The density depth profile and chemical bond structure of hydrogen silsesquioxane (HSQ) thin films treated with an N2 plasma with varying power and exposure time were measured using specular x-ray reflectivity (SXR) and Fourier transform infrared (FTI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55d0dc986114cc59959988b581ec697d
https://doi.org/10.1557/proc-714-l7.10.1
https://doi.org/10.1557/proc-714-l7.10.1