Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Huei-Min Huang"'
Autor:
Huei-Min Huang, 黃煇閔
95
Gamma-phase lithium aluminate (LiAlO2) single crystal is grown by Czochralski pulling method and a-plane LiAlO2(LAO) is chosen as the substrate for subsequent gallium nitride (GaN) epitaxial growth by plasma-assisted molecular beam epitaxy (P
Gamma-phase lithium aluminate (LiAlO2) single crystal is grown by Czochralski pulling method and a-plane LiAlO2(LAO) is chosen as the substrate for subsequent gallium nitride (GaN) epitaxial growth by plasma-assisted molecular beam epitaxy (P
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/55hgju
Publikováno v:
Crystal Growth & Design. 13:3098-3102
The growth mechanism and characteristics of the nonpolar GaN/ZnO heterostructure grown on the r-plane sapphire substrate by using molecular beam epitaxy were studied. The crystal interaction between GaN and ZnO epitaxial layers was clarified by using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06b3c7d01227b634d2e55deaf337ff98
https://doi.org/10.1021/cg400497r
https://doi.org/10.1021/cg400497r
Autor:
Shing-Chung Wang, Li-Wei Tu, Yu-Pin Lan, Wen-Feng Hsieh, Huei Min Huang, Chiao Yun Chang, Hao-Chung Kuo, Tien-Chang Lu
Publikováno v:
MRS Proceedings. 1538:303-307
The crystal structure of a-plane GaN/ZnO heterostructures on r-plane sapphire was investigated by using the XRD and TEM measurment. It was found the formation of (220) ZnGa2O4 and crystal orientation of semipolar (10$\bar 1$3) GaN at GaN/ZnO interfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1538f63c26e0257909542b2f4a888dae
https://doi.org/10.1557/opl.2013.550
https://doi.org/10.1557/opl.2013.550
Publikováno v:
IEEE Journal of Quantum Electronics. 48:867-871
In this paper, we investigated polarized light emission properties on a series of a-plane GaN/AlGaN multiple quantum wells grown on r-plane sapphire substrates with various well widths by using the polarization-dependent photoluminescence measurement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6df07756262644833db1ca90f37dc619
https://doi.org/10.1109/jqe.2012.2191140
https://doi.org/10.1109/jqe.2012.2191140
Autor:
Hao-Chung Kuo, Wei-Wen Chan, Shih-Chun Ling, Huei Min Huang, Chiao-Yun Chang, Shing-Chung Wang, Tien-Chang Lu
Publikováno v:
Journal of Lightwave Technology. 29:2761-2765
Non-polar (a-plane) InGaN-GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73 ×
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3733ec007e79e56d017bedd0d0383d7
https://doi.org/10.1109/jlt.2011.2164896
https://doi.org/10.1109/jlt.2011.2164896
Publikováno v:
IEEE Journal of Quantum Electronics. 47:1101-1106
A-plane InGaN/GaN multiple-quantum wells (MQWs) were grown on a series of nanorod epitaxial lateral overgrowth (NRELOG) templates with varied nanorod depth. Optical properties of these samples were investigated by excitation power and temperature-dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bb891d8df472d653c8f572c536155f5
https://doi.org/10.1109/jqe.2011.2158632
https://doi.org/10.1109/jqe.2011.2158632
Autor:
Jui-Yuan Chen, Huei Min Huang, Tien-Chang Lu, S. C. Wang, Jinchai Li, Hao-Chung Kuo, Shih-Chun Ling, Tsung-Shine Ko
Publikováno v:
Journal of Crystal Growth. 312:869-873
The non-polar a -plane Al x Ga 1− x N alloys on GaN epitaxial layer with different Al compositions (0≤ x ≤0.2) were grown on r -plane (1 1¯ 0 2) sapphire substrates by using low-pressure metalorganic chemical vapor deposition (MOCVD) and the A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e59b77b8c4e3880e99e581fb24c900da
https://doi.org/10.1016/j.jcrysgro.2009.12.064
https://doi.org/10.1016/j.jcrysgro.2009.12.064
Autor:
Huei Min Huang, Yuan Ting Lin, Li-Wei Tu, Tien-Chang Lu, Wen-Feng Hsieh, Chiao Yun Chang, Chin Chia Kuo
Publikováno v:
Journal of The Electrochemical Society. 159:H290-H292
We report on growth and characteristics of a-plane GaN/ZnO/GaN epitaxial structures, which can be applied to various optoelectronic devices. The unique optical transitions intrinsic to heterovalent interfaces were found and analyzed. Clear carrier lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::251a30b5cebb6979cca062b5ac307e87
https://doi.org/10.1149/2.080203jes
https://doi.org/10.1149/2.080203jes
Publikováno v:
The Review of scientific instruments. 84(11)
In this work, we demonstrate that depth-resolved confocal micro-Raman spectroscopy can be used to characterize the active layer of GaN-based LEDs. By taking the depth compression effect due to refraction index mismatch into account, the axial profile
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90f4b0549b91cbe5212ac11312d1fead
https://pubmed.ncbi.nlm.nih.gov/24289389
https://pubmed.ncbi.nlm.nih.gov/24289389
Autor:
H. C. Kuo, Tien-Chang Lu, Huei Min Huang, S. C. Wang, Chiao Yun Chang, W.F. Hsieh, Li-Wei Tu, Yu-Pin Lan
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a5699699349163e9adbee371be867b6
https://doi.org/10.7567/ssdm.2013.ps-8-22l
https://doi.org/10.7567/ssdm.2013.ps-8-22l