Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Huei-Jruan Wang"'
Autor:
Wen-Jen Chen, Kai-Huang Chen, Simon M. Sze, Kuan-Chang Chang, Chao Chen, Chih-Cheng Shih, Ting-Chang Chang, Rui Zhang, Huei-Jruan Wang, Tsung-Ming Tsai, Jung-Hui Chen, Xuan Huang, Fengyan Zhang, Syuan-Yong Huang
Publikováno v:
IEEE Electron Device Letters. 35:1227-1229
In this letter, we investigated oxygen ion concentration gradient method, which can manipulate the set voltage of zinc oxide-doped silicon oxide resistance random access memory. To analyze this method, the ITO/ZnO:SiO 2 /ZnOx/TiN bilayer structure wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28771e08228a5140d6c6e55fca34d6c7
https://doi.org/10.1109/led.2014.2360525
https://doi.org/10.1109/led.2014.2360525
Autor:
Huei-Jruan Wang, 王慧娟
102
With the progress of technology, high capacity and scalable are required in the future. Recent years, the physical limit is approached and a next-generation memory is inevitably. In addition, non- volatile memory occupies more than 96% in th
With the progress of technology, high capacity and scalable are required in the future. Recent years, the physical limit is approached and a next-generation memory is inevitably. In addition, non- volatile memory occupies more than 96% in th
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/9bdks5
Autor:
Huang, Xuan, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Shih, Chih-Cheng, Zhang, Rui, Huang, Syuan-Yong, Chen, Kai-Huang, Chen, Jung-Hui, Wang, Huei-Jruan, Chen, Wen-Jen, Zhang, Fengyan, Chen, Chao, Sze, Simon M.
Publikováno v:
IEEE Electron Device Letters; Dec2014, Vol. 35 Issue 12, p1227-1229, 3p