Advancements in semiconductor quantum dots: expanding frontiers in optoelectronics, analytical sensing, biomedicine, and catalysis.

Autor: Mondal, Jiban, Lamba, Rohan, Yukta, Yukta, Yadav, Rohit, Kumar, Ram, Pani, Balaram, Singh, Bholey

Publikováno v: Journal of Materials Chemistry C; 7/28/2024, Vol. 12 Issue 28, p10330-10389, 60p

Colloidal HgTe Quantum Dot/Graphene Phototransistor with a Spectral Sensitivity Beyond 3 µm.

Autor: Grotevent, Matthias J.^1,2 (AUTHOR), Hail, Claudio U.³ (AUTHOR), Yakunin, Sergii^1,4 (AUTHOR), Bachmann, Dominik² (AUTHOR), Calame, Michel^2,5 (AUTHOR), Poulikakos, Dimos³ (AUTHOR), Kovalenko, Maksym V.^1,4 (AUTHOR) mvkovalenko@ethz.ch, Shorubalko, Ivan² (AUTHOR) ivan.shorubalko@empa.ch

Publikováno v: Advanced Science. Mar2021, Vol. 8 Issue 6, p1-7. 7p.

Breaking the Responsivity‐Bandwidth Trade‐Off Limit in GaN Photoelectrodes for High‐Response and Fast‐Speed Optical Communication Application.

Autor: Fang, Shi, Li, Liuan, Wang, Danhao, Chen, Wei, Kang, Yang, Wang, Weiyi, Liu, Xin, Luo, Yuanmin, Yu, Huabin, Zhang, Haochen, Memon, Muhammad Hunain, Hu, Wei, He, Jr‐Hau, Gong, Chen, Zuo, Chengjie, Liu, Sheng, Sun, Haiding

Publikováno v: Advanced Functional Materials; 9/12/2023, Vol. 33 Issue 37, p1-11, 11p

Black Arsenic Phosphorus Mid-Wave Infrared Barrier Detector with High Detectivity at Room Temperature.

Autor: Zhang S; Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, Zhejiang, 310024, China.; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China., Huang X; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China., Chen Y; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.; Frontier Institute of Chip and System, Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, 200433, China., Yin R; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China., Wang H; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China., Xu T; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China., Guo J; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China., Wang X; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China., Lin T; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China., Shen H; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China., Ge J; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China., Meng X; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China., Hu W; Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, Zhejiang, 310024, China.; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China., Dai N; Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, Zhejiang, 310024, China.; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China., Wang X; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China., Chu J; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.; Frontier Institute of Chip and System, Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, 200433, China., Wang J; Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, Zhejiang, 310024, China.; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.; Frontier Institute of Chip and System, Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, 200433, China.

Publikováno v: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 May; Vol. 36 (21), pp. e2313134. Date of Electronic Publication: 2024 Feb 19.

Band-engineered dual-band visible and short-wave infrared photodetector with metal chalcogenide colloidal quantum dots.

Autor: Zhao, Pengfei, Qin, Tianling, Mu, Ge, Zhang, Shuo, Luo, Yuning, Chen, Menglu, Tang, Xin

Publikováno v: Journal of Materials Chemistry C; 2/28/2023, Vol. 11 Issue 8, p2842-2850, 9p