Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium.

Autor: N. Jain, Y. Zhu, Maurya, D., Varghese, R., Priya, S., Hudait, M. K.

Publikováno v: Journal of Applied Physics; 2014, Vol. 115 Issue 2, p1-8, 8p, 1 Black and White Photograph, 1 Diagram, 5 Charts, 6 Graphs

Comparison of mixed anion, InAsyP1-y and mixed cation, InxAl1-xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates.

Autor: Hudait, M. K., Lin, Y., Palmisiano, M. N., Tivarus, C., Pelz, J. P., Ringel, S. A.

Publikováno v: Journal of Applied Physics; 4/15/2004, Vol. 95 Issue 8, p3952-3960, 9p, 2 Black and White Photographs, 1 Diagram, 7 Graphs

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy

Autor: Hudait, M K, Lin, Y, Wilt, D M, Speck, J S, Tivarus, C A, Heller, E R, Pelz, J P, Ringel, S A

Publikováno v: Hudait, M K; Lin, Y; Wilt, D M; Speck, J S; Tivarus, C A; Heller, E R; et al.(2003). High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy. Applied Physics Letters, 82(19), 3212-3214. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/6327m3jq

Relaxed, high-quality, compositionally step-graded InAsyP1-y layers with an As composition of y=0.4, corresponding to a lattice mismatch of similar to1.3% were grown on InP substrates using solid-source molecular-beam epitaxy. Each layer was found to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::3795a8a7bf3f9a2c88efc42541bc9db1
http://www.escholarship.org/uc/item/6327m3jq