Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Hubert Hody"'
Autor:
Taras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Kar
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Autor:
Taras Ravsher, Andrea Fantini, Adrian Vaisman Chasin, Shamin Houshmand Sharifi, Hubert Hody, Harold Dekkers, Thomas Witters, Jan Van Houdt, Valeri Afanas'ev, Sebastien Couet, Gouri Sankar Kar
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
ispartof: 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) ispartof: IEEE International Reliability Physics Symposium (IRPS) location:TX, Dallas date:27 Mar - 31 Mar 2022 status: published
Autor:
Taras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. :2200417
Autor:
Taras Ravsher, Robin Degraeve, Daniele Garbin, Andrea Fantini, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar
ispartof: 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) ispartof: IEEE International Electron Devices Meeting (IEDM) location:CA, San Francisco date:11 Dec - 16 Dec 2021 status: published
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10f4df6932453069195f409c5e305d94
https://lirias.kuleuven.be/handle/20.500.12942/700465
https://lirias.kuleuven.be/handle/20.500.12942/700465
Autor:
Sandip Halder, Murat Pak, Danilo De Simone, Monique Ercken, Gouri Sankar Kar, D. Crotti, Pieter Vanelderen, Farrukh Yasin, Hubert Hody, Laurent Souriau
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
The read performance of a spin-transfer torque magnetic random-access memory device is based on the tunnel magnetoresistance of the magnetic tunnel junction cell, which is a function of the resistance values at low and high resistance states of the m
Publikováno v:
Surface and Coatings Technology. 205:22-29
In order to functionalize silicon carbide nanopowders with carboxylic groups, an r.f. (13.56 MHz) low pressure plasma reactor has been developed so that particles can be stirred during the processing to try to coat them on their whole surface. Coatin
Publikováno v:
Plasma Processes and Polymers. 7:403-410
Publikováno v:
Terwagne, G, Hody, H & Colaux, J 2003, ' Structural and quantitative analysis of stainless steel coatings deposited by DC-magnetron sputtering in a reactive atmosphere ', Surface and Coatings Technology, vol. 174-175, pp. 383-388 .
Stainless steel coatings were deposited on low carbon steel and thin SiO 2 substrates by DC-magnetron sputtering in a reactive atmosphere containing argon, nitrogen and hydrogen. The total mass flow of nitrogen was kept constant (8 sccm) for all depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f00811ebec15d6441a168ea022fd892
https://pure.unamur.be/ws/files/978304/44886.pdf
https://pure.unamur.be/ws/files/978304/44886.pdf
Autor:
Iuliana P. Radu, Bogdan Govoreanu, Koen Martens, Michael Toeller, Antony P. Peter, M. R. Ikram, Le Qi Zhang, Hubert Hody, Woosik Kim, Paola Favia, Thierry Conard, Hsing Yi Chou, Brecht Put, Valery V. Afanas'ev, Andre Stesmans, Marc Heyns, Stefan De Gendt, Malgorzata Jurczak
Publikováno v:
ECS Meeting Abstracts. :2179-2179
not Available.
Autor:
V. Paraschiv, Hubert Hody, Emma Vecchio, Gustaf Winroth, S. Locorotondo, Werner Boullart, Raja Athimulam
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 12:041306
In this paper, we report a double patterning process resulting in amorphous silicon (a-Si) gate lines with a thickness of 80nm and a lateral critical dimension (CD) below 30nm. We present a full stack for a double patterning approach for etch transfe