Zobrazeno 1 - 10
of 94
pro vyhledávání: '"Hubbard band"'
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 3, Pp 28-35 (2020)
We report on the electric transport properties of Si heavily doped with Sb in the temperature range of 1.9 - 3.0 K and at current density of J < 0.2 A/cm2. Based on the analysis of the current - voltage characteristics, the resistance values at diffe
Externí odkaz:
https://doaj.org/article/d0e70dad09334adb8bc173f031013046
Akademický článek
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Autor:
R. O. Zaitsev
Publikováno v:
Journal of Experimental and Theoretical Physics. 129:1079-1085
The conditions for the emergence of inhomogeneous states are investigated from analysis of the equation of state. It is assumed that Hubbard energy U > t, i.e., corresponds to the conditions of strong electron–electron correlations. The magnetic ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b93988638dfdb83fead8d9644d55259
https://doi.org/10.1134/s1063776119110190
https://doi.org/10.1134/s1063776119110190
Publikováno v:
New Journal of Physics, Vol 17, Iss 8, p 083058 (2015)
Bifunctional effects of the Si atoms intercalated between the n-type 6H–SiC(0001) substrate and the $(6\sqrt{3}\times 6\sqrt{3})R30^\circ $ zero layer have been disclosed by scanning tunneling microscopy, low-energy electron diffraction, high-resol
Externí odkaz:
https://doaj.org/article/ca2d3ac914884e7da35cca2f14371a6c
Autor:
Yasutomo Kajikawa
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The low-temperature data of Hall-effect measurements on n-type InP samples have been analyzed on the basis of an impurity-Hubbard-band model with taking into account the temperature dependence of the Hall factor for hopping conduction in impurity Hub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ad0d46ef7f182f7e6a0c102adf71d19
https://doi.org/10.1109/iciprm.2019.8819179
https://doi.org/10.1109/iciprm.2019.8819179
Autor:
Liwei Liu, Yuan Huang, Teng Zhang, Fawei Zheng, Yuting Huang, Hong-Jun Gao, Han Yang, Yaoyao Chen, Ziqiang Xu, Xuan Song, Yugui Yao, Xian-Bin Li, Yeliang Wang, Yanhui Hou, Jiatao Sun, Quanzhen Zhang, Zeping Huang, Xu Wu
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-1 (2021)
A Correction to this paper has been published: https://doi.org/10.1038/s41467-021-23418-z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b0329c380c647ca282ce6897ab60c72
https://doaj.org/article/9447da8fa5b343579a1508d7c615c34a
https://doaj.org/article/9447da8fa5b343579a1508d7c615c34a
Autor:
Yasutomo Kajikawa
Publikováno v:
Materials Science and Engineering: B. 263:114809
The reported experimental data of the temperature dependence of the conductivity and the Hall coefficient of compensated n-InSb and n-InAs have been restudied in a new light of a recently developed impurity-Hubbard-band model. It is shown that the Ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6106c875a51304ed01755f5ba4a6db8f
https://doi.org/10.1016/j.mseb.2020.114809
https://doi.org/10.1016/j.mseb.2020.114809
Akademický článek
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Dynamical mean-field theory (DMFT) studies frequently observe a fine structure in the local spectral function of the SU(2) Fermi-Hubbard model at half filling: In the metallic phase close to the Mott transition, subpeaks emerge at the inner edges of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2158b6d11fa09cfdde3c6fcd08b0f10e
Autor:
C. C. Fan, Li Mingying, Ming Jiang, Jia-Qian Liu, Z. T. Liu, Dawei Shen, H. F. Yang, Qiong Yao
Publikováno v:
Physical Review B. 94
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce92ce72389b2eef63c1e8f80ac4abb4
https://doi.org/10.1103/physrevb.94.115151
https://doi.org/10.1103/physrevb.94.115151