Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Huazhen Huang"'
Publikováno v:
Advanced Science, Vol 10, Iss 22, Pp n/a-n/a (2023)
Abstract Proteins are the building blocks of life, carrying out fundamental functions in biology. In computational biology, an effective protein representation facilitates many important biological quantifications. Most existing protein representatio
Externí odkaz:
https://doaj.org/article/687d03d8b9834052aaa3fc3cac28ac6d
Autor:
Huazhen Huang, Tiebing Lu
Publikováno v:
IEEE Transactions on Power Electronics. 37:11974-11984
Autor:
Caijun Cheng, Huazhen Huang
Publikováno v:
Mathematical Problems in Engineering. 2022:1-10
With the rise of deep learning technology, due to the superior performance of the deep neural network, its application in the digital economy has attracted extensive attention of scholars. Since the beginning of the 21st century, my country’s digit
Autor:
Huazhen Huang, Zhifei Liu, Yulong Zhao, Hongchao Zhao, Adrian R. Fernandez, Christophe Colin, Andrew Tien-Shun Lin
Publikováno v:
Palaeogeography, Palaeoclimatology, Palaeoecology. 624:111650
Drug discovery is vitally important for protecting human against disease. Target-based screening is one of the most popular methods to develop new drugs in the past several decades. This method efficiently screens candidate drugs inhibiting target pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d273fcd754e84809a6fbef6506cd0f8e
http://arxiv.org/abs/2208.04944
http://arxiv.org/abs/2208.04944
Publikováno v:
Journal of Power Electronics. 21:494-504
Wide band gap semiconductor device silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have many advantages and are considered to be the most promising alternative to silicon (Si) insulated gate bipolar transistors (IGB
Publikováno v:
IEEE Transactions on Electromagnetic Compatibility. 62:2285-2293
Insulated gate bipolar transistor (IGBT) has been widely used in the voltage-source-converter-based high-voltage direct current (VSC-HVDC). However, the electromagnetic interference (EMI) generated by its fast switching process affects the normal ope
Publikováno v:
IEEE Transactions on Power Electronics. 35:3963-3972
This article addresses the influence of parameters spread on transient current distribution among parallel-connected silicon carbide (SiC) mosfet s and proposes a chips classification method to suppress current imbalance. A comprehensive comparison o
Publikováno v:
Ann Transl Med
BACKGROUND: The causes of valvular disease in China are complex, with a broad age distribution. For patients with early mechanical valve replacement, the quality of life is affected by postoperative anticoagulation-related complications. Since 2005,
Publikováno v:
University Chemistry. 33:75-81