Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Huayang Huang"'
Autor:
Tianwu Chen, Xizhuang Bai, Lunhao Bai, Wai Sin Chan, Shiyi Chen, Chen Chen, Jiwu Chen, Liaobin Chen, Guofeng Dai, Zhizeng Gao, Yang Guo, Yong Hu, Ning Hu, Huayang Huang, Xunwu Huang, Xuan Huang, Jingmin Huang, Yifan Kang, Hung Maan Lee, Hongyun Li, Yunxia Li, Jin Li, Kuanxin Li, Yanlin Li, Jian Li, Qi Li, Ruixin Lin, Xinwei Liu, Ning Liu, Wei Lü, Hongbin Lü, Xiaogang Ma, Kun Mi, Zhiming Qi, Luning Sun, Jun Tao, Xueren Teng, Xuesong Wang, Jianquan Wang, Kai Wang, Fei Wang, Hong Wang, Weiming Wang, Meng Wu, Yayi Xia, Gengyan Xing, Weidong Xu, Youjia Xu, Kun Yin, Hongbo You, Jia-Kuo Yu, Patrick Yung, Hui Zhang, Xinghuo Zhang, Xintao Zhang, Chunli Zhang, Wentao Zhang, Weiguo Zhang, Yufei Zhang, Keyuan Zhang, Yadong Zhang, Lei Zhang, Qichun Zhao, Jiapeng Zheng, Jingbin Zhou, Liwu Zhou, Yongsheng Xu
Publikováno v:
Journal of Orthopaedic Translation, Vol 48, Iss , Pp 163-175 (2024)
Background: In the recent decade, there has been substantial progress in the technologies and philosophies associated with diagnosing and treating anterior cruciate ligament (ACL) injuries in China. The therapeutic efficacy of ACL reconstruction in r
Externí odkaz:
https://doaj.org/article/24c98dedf7ca4482ab109a8bff41605d
Autor:
Zhaohua Shen, Xuelin Yang, Shan Wu, Huayang Huang, Xiaolan Yan, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bing Huang, Bo Shen
Publikováno v:
AIP Advances, Vol 13, Iss 3, Pp 035026-035026-5 (2023)
Heavy carbon (C) doping is of great significance for semi-insulating GaN in power electronics. However, the doping behaviors, especially the atomic configurations and related self-compensation mechanisms, are still under debate. Here, with the format
Externí odkaz:
https://doaj.org/article/29470361e11143e79e679c14aa7b4233
Autor:
Lingchuang Kong, Tao Yang, Qing Wang, Yongliang Ou, Huayang Huang, Wenhan Huang, Tao Zhang, Yu Zhang, Xiaolong Zeng
Publikováno v:
Frontiers in Bioengineering and Biotechnology, Vol 10 (2022)
Anterior cruciate ligament deficiency (ACLD) patients tend to walk slowly but try to catch up with the speed level of healthy subjects daily. Exploring the effects of the walking speed level of healthy subjects on the ACLD patients’ knee kinematics
Externí odkaz:
https://doaj.org/article/9849864437a34c9ba8f88b146efc4b68
Publikováno v:
ACM Transactions on Privacy & Security; Nov2023, Vol. 26 Issue 4, p1-24, 24p
Publikováno v:
IEEE Network. 36:84-90
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1ad4eeb40df0586f9bbaa297319ebce
https://doi.org/10.1109/mnet.011.2000783
https://doi.org/10.1109/mnet.011.2000783
Publikováno v:
IEEE Journal on Selected Areas in Communications. 39:2617-2631
The time and monetary costs of training sophisticated deep neural networks are exorbitant, which motivates resource-limited users to outsource the training process to the cloud. Concerning that an untrustworthy cloud service provider may inject backd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4be5bd9625de1b984cfabd64fede4f07
https://doi.org/10.1109/jsac.2021.3087237
https://doi.org/10.1109/jsac.2021.3087237
Publikováno v:
IEEE Network. 34:141-147
Deep neural networks have achieved tremendous success in various fields, especially in recognition and classification applications. However, faced with the difficulty of training millions of parameters of such networks, many users outsource the train
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5d1c944cec10df8fcfc92c1e6b6f282
https://doi.org/10.1109/mnet.011.1900577
https://doi.org/10.1109/mnet.011.1900577
Autor:
Huayang Huang, Xiaolan Yan, Xuelin Yang, Wensheng Yan, Zeming Qi, Shan Wu, Zhaohua Shen, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bing Huang, Bo Shen
Publikováno v:
Applied Physics Letters. 121:252101
Identifying atomic configurations of impurities in semiconductors is of fundamental interest and practical importance in designing electronic and optoelectronic devices. C impurity acting as one of the most common impurities in GaN, it is believed fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a155e2ef2e14856b578b21f0b60e9402
https://doi.org/10.1063/5.0132130
https://doi.org/10.1063/5.0132130
Autor:
Shan Wu, Xuelin Yang, Huayang Huang, Zhaohua Shen, Yuanyuan Xue, Han Yang, Liubing Wang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen
Publikováno v:
Japanese Journal of Applied Physics. 61:090901
It is empirically well acknowledged that C doping makes GaN high-resistive. However, the detailed doping type and high-resistivity mechanisms of C doped GaN, which are extremely essential for GaN power electronics, still remain unclear. In this work,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b206a3b0d54ce65332ca6e50128f1e6b
https://doi.org/10.35848/1347-4065/ac8535
https://doi.org/10.35848/1347-4065/ac8535
Autor:
Shan Wu, Xuelin Yang, Zhenxing Wang, Zhongwen Ouyang, Huayang Huang, Qing Zhang, Qiuyu Shang, Zhaohua Shen, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen
Publikováno v:
Applied Physics Letters. 120:242101
It has been established that the formation of point defects and their behaviors could be regulated by growth details such as growth techniques and growth conditions. In this work, we prove that C doping approaches have great influence on the charge s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e02aa3e360b107517dc2cd16056f3ae3
https://doi.org/10.1063/5.0093514
https://doi.org/10.1063/5.0093514