Zobrazeno 1 - 10
of 88
pro vyhledávání: '"Huaxiang Yi"'
Publikováno v:
Journal of Physics: Conference Series; 2024, Vol. 2740 Issue 1, p1-5, 5p
Autor:
Xiaohui Zhu, Huaxiang Yin
Publikováno v:
Results in Physics, Vol 63, Iss , Pp 107856- (2024)
Silicon (Si)-based quantum-dot (QD) device by advanced CMOS process is one of important technologies for quantum computing application and currently, it needs a fast and accurate quantum characteristics simulation for designing and optimizing the dev
Externí odkaz:
https://doaj.org/article/08508fac67664cc3a726aae9237e1209
Autor:
Shuang Liu, Heyi Huang, Yanqing Li, Yadong Zhang, Feixiong Wang, Zhaohao Zhang, Qingzhu Zhang, Jiali Huo, Jiaxin Yao, Jing Wen, Huaxiang Yin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 889-897 (2024)
One-dimensionalcarbon nanotube field-effect transistors (CNFETs) have offered a solution for obtaining high transistor performance in a compatible low-temperature BEOL process, enabling monolithic 3D integration benefits for more functional circuits.
Externí odkaz:
https://doaj.org/article/2360aa6dc38649d9b9e99d00e8220be4
Autor:
Yunjiao Bao, Gangping Yan, Lei Cao, Chuqiao Niu, Qingkun Li, Guanqiao Sang, Lianlian Li, Yanzhao Wei, Xuexiang Zhang, Jie Luo, Yanyu Yang, Gaobo Xu, Huaxiang Yin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 637-644 (2024)
In this article, a partially isolated dual work function (PIDWF) gate In-Ga-Zn-O (IGZO) thin-film transistor (TFT) is proposed to reduce the off-state current (Ioff) obviously, which also provides a feasible integration method for stacking IGZO TFT o
Externí odkaz:
https://doaj.org/article/36b00619ee6f4e9dbf7272f0d1aff2a3
Autor:
Jie Luo, Yanyu Yang, Gangping Yan, Chuqiao Niu, Yunjiao Bao, Yupeng Lu, Zhengying Jiao, Jinjuan Xiang, Guilei Wang, Gaobo Xu, Huaxiang Yin, Chao Zhao, Jun Luo
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 613-618 (2024)
Amorphous oxide semiconductor-thin film transistors (AOS-TFTs) have attracted considerable attention due to their impressive performance in various applications. However, there is a limited amount of study available on the reliability of AOS-TFTs. Th
Externí odkaz:
https://doaj.org/article/a55bab4e20c54ce2bc6aaf3bc964c961
Autor:
Jiawei Hu, Yinglu Li, Xufang Zhang, Yanrong Wang, Jing Zhang, Jiang Yan, Junjie Li, Zhaohao Zhang, Huaxiang Yin, Qianhui Wei, Qifeng Jiang, Shuhua Wei, Qingzhu Zhang
Publikováno v:
Biosensors, Vol 14, Iss 10, p 461 (2024)
In the original publication [...]
Externí odkaz:
https://doaj.org/article/35d504f160da4024a5f8c8db8fc502aa
Autor:
Hongbin Zhao, Chaozhao Hou, Hailing Tu, Zhangyu Zhou, Feng Wei, Jinjuan Xiang, Jiaxin Yao, Qingzhu Zhang, Jie Gu, Gaobo Xu, Yudong Li, Junjie Li, Yu Pan, Junfeng Li, Wenjuan Xiong, Yihong Lu, Zhenhua Wu, Lingkuan Meng, Jiang Yan, Huaxiang Yi, Guilei Wang, Zhijun Cao, Wenwu Wang, Xiaobin He, Jiangfeng Gao, Renren Xu, Qifeng Jiang, Kun Luo, Zhaohao Zhang
Publikováno v:
2018 China Semiconductor Technology International Conference (CSTIC).
In this paper, a fin-on-insulator (FOI) FinFET structure with a metallic source and drain (MSD) and HKMG-last processes was investigated extensively. FOI FinFETs demonstrated ten times of leakage current reduction compared with conventional bulk FinF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f26fd83caaea4692d80316b491726806
https://doi.org/10.1109/cstic.2018.8369199
https://doi.org/10.1109/cstic.2018.8369199
Publikováno v:
Optics Communications. 355:285-289
Scattering loss caused by roughness of waveguide sidewalls is a key problem for long circumference microring based applications, such as comb filters. This paper presents a Si microring resonator incorporated with the multimode waveguide and single-m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80642300e9e73ed173b3144153a08a8f
https://doi.org/10.1016/j.optcom.2015.06.060
https://doi.org/10.1016/j.optcom.2015.06.060
Publikováno v:
Nanomaterials, Vol 14, Iss 11, p 916 (2024)
Silicon qubits based on specific SOI FinFETs and nanowire (NW) transistors have demonstrated promising quantum properties and the potential application of advanced Si CMOS devices for future quantum computing. In this paper, for the first time, the q
Externí odkaz:
https://doaj.org/article/647b1796d77c4fdf8ca9aae13b0934e8
Autor:
Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 11, Pp n/a-n/a (2023)
Artificial synapses are key elements in building bioinspired, neuromorphic computing systems. Ferroelectric field‐effect transistors (FeFETs) with excellent controllability and complementary metal oxide semiconductor (CMOS) compatibility are favora
Externí odkaz:
https://doaj.org/article/49aba2ff74004ff7a5634dd3fc913dcf