Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Huaping Lei"'
Publikováno v:
Guangxi Zhiwu, Vol 43, Iss 9, Pp 1553-1567 (2023)
Seed development is a complex biological process that is controlled by various genetic and external factors, and significantly affects the seed vigor, yield and quality of crops, especially cereal plant crops. Abscisic acid (ABA) is one of the most i
Externí odkaz:
https://doaj.org/article/22df663a83e14801bd521fdcee65ddc8
Publikováno v:
AIP Advances, Vol 13, Iss 1, Pp 015015-015015-16 (2023)
In this paper, a new version of the Stillinger–Weber (SW) potential for wurtzite GaN is presented, by which we systematically explore the structural and thermodynamical properties of native point defects and their complexes. In parallel, the semi-e
Externí odkaz:
https://doaj.org/article/9425bd88aa814eb2a96d36b574830c51
Publikováno v:
Marine Drugs, Vol 9, Iss 5, Pp 863-878 (2011)
Black corals (BC) have been used for a long time in Chinese medicine, and may have some pharmaceutical functions when used as material for cigarette holders in southeast China. This study is aimed to investigate the bioactivities of volatile constitu
Externí odkaz:
https://doaj.org/article/337b8f8cfdf94733b2742e5a877920d0
First principles calculations were performed to study the structural, elastic, and bonding properties of hcp ZrxTi1-x binary alloy. The special quasi- random structure (SQS) method is employed to mimic the random hcp ZrxTi1-x alloy. It is found that
Externí odkaz:
http://arxiv.org/abs/1512.06408
The infuences of hydrogen on the generalized stacking fault (GSF) energies of the basal plane along the <10-10> and <11-20> directions in the hcp Zr were investigated using the first-principles calculation method. The modifications of the GSF energie
Externí odkaz:
http://arxiv.org/abs/1512.01163
Autor:
Huaping Lei, Yachao Jiang, Jinhua Liu, Youliang Guan, Songquan Song, Cuifang Tang, Sitian Fei, Hui Zhang
Publikováno v:
Pakistan Journal of Pharmaceutical Sciences; 2024 Special Issue, Vol. 37, p235-243, 9p
Autor:
Kwolek, Emma J., Huaping Lei, Lii-Rosales, Ann, Wallingford, Mark, Yinghui Zhou, Cai-Zhuang Wang, Tringides, Michael C., Evans, James W., Thiel, Patricia A.
Publikováno v:
Journal of Chemical Physics; 2016, Vol. 145 Issue 21, p1-8, 8p, 3 Color Photographs, 1 Diagram, 2 Charts, 4 Graphs
Publikováno v:
RSC Advances. 6:54371-54376
The influence of hydrogen on the Generalized Stacking Fault (GSF) energies of the {0001} basal plane along the 〈100〉 and 〈110〉 directions in HCP Zr has been investigated by using the first-principles calculations. The variations of GSF energi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80f040d5a0c7c516a400c8256ee8d2b8
https://doi.org/10.1039/c6ra10683h
https://doi.org/10.1039/c6ra10683h
Publikováno v:
Computational Materials Science
Computational Materials Science, Elsevier, 2018, 154, pp.152-158. ⟨10.1016/j.commatsci.2018.07.060⟩
Computational Materials Science, 2018, 154, pp.152-158. ⟨10.1016/j.commatsci.2018.07.060⟩
Computational Materials Science, Elsevier, 2018, 154, pp.152-158. ⟨10.1016/j.commatsci.2018.07.060⟩
Computational Materials Science, 2018, 154, pp.152-158. ⟨10.1016/j.commatsci.2018.07.060⟩
International audience; A structural investigation of (0 0 0 1) plane inversion domain boundaries (IDBs) in group III-nitrides (GaN, AlN and InN) has been carried out by means of Monte Carlo (MC) simulation of Stillinger-Weber empirical potential. Ei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4a5c0391376e4490a0acfba40385bb5
https://hal.archives-ouvertes.fr/hal-02339795
https://hal.archives-ouvertes.fr/hal-02339795
Autor:
Ümit Özgür, Pierre Ruterana, Barkat Ullah, Huaping Lei, Yi Wang, Siqian Li, Hadis Morkoç, Vitaliy Avrutin, Jun Chen
Publikováno v:
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2018, 10 (43), pp.37651-37660. ⟨10.1021/acsami.8b12202⟩
ACS Applied Materials & Interfaces, 2018, 10 (43), pp.37651-37660. ⟨10.1021/acsami.8b12202⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2018, 10 (43), pp.37651-37660. ⟨10.1021/acsami.8b12202⟩
ACS Applied Materials & Interfaces, 2018, 10 (43), pp.37651-37660. ⟨10.1021/acsami.8b12202⟩
International audience; In semiconductor heterojunction, polarity critically governs the physical properties, with an impact on electronic or optoelectronic devices through the presence of pyroelectric and piezoelectric fields at the active heteropol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e0786e704a0838fbffa1a5b9addd077
https://hal.archives-ouvertes.fr/hal-02339810
https://hal.archives-ouvertes.fr/hal-02339810