Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Huang-Hsiung Huang"'
Autor:
Yi-Lin Tsai, Sheng-Kai Huang, Huang-Hsiung Huang, Shu-Mei Yang, Kai-Ling Liang, Wei-Hung Kuo, Yen-Hsiang Fang, Chih-I Wu, Shou-Wei Wang, Hsiang-Yun Shih, Zhiyu Xu, Minkyu Cho, Shyh-Chiang Shen, Chien-Chung Lin
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 6, Pp 1-9 (2020)
We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (si
Externí odkaz:
https://doaj.org/article/bfe0c5b6110a40bbabc727e4414d710a
Autor:
Yen-Hsiang Fang, Chien-Chung Lin, Shyh-Chiang Shen, Hsiang-Yun Shih, Yi-Lin Tsai, Minkyu Cho, Sheng-Kai Huang, S.C. Wang, Huang-Hsiung Huang, Kai-Ling Liang, Zhiyu Xu, Chih-I Wu, Shu-Mei Yang, Wei-Hung Kuo
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 6, Pp 1-9 (2020)
We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (si
Autor:
Wei Lin, Hsiang Yun Shih, Shou Wei Wang, Chien-Chung Lin, Yi-Lin Tsai, Po Yen Lu, Huang Hsiung Huang
Publikováno v:
IEEE Photonics Technology Letters. 32:534-537
In this study, Fabry-Perot quantum well lasers with shortened cavity designs (25 and 50 μm) were fabricated. The devices had dry-etched and cleaved facets and exhibited an output power of up to 2.36 mW for a cavity length of 25 μm; good spectral pe
Autor:
Yu-Ming Huang, Chien-Chung Lin, Huang-Hsiung Huang, Chao-Hsin Wu, Hao-Chung Kuo, Shun-Chieh Hsu, Hsiang-Yun Shih, S.C. Wang, Yen-Wei Yeh, Yun-Ting Lu, Yu-Yun Cho
Publikováno v:
2019 IEEE Photonics Conference (IPC).
An oxide aperture strained quantum well VCSEL model was built based on measured results. The indium composition of MQW was changed to maximize the frequency response. The simulation result shows that the bandwidth can be improved and reach 30.88GHz.
Autor:
Yi-Lin Tsai, Hsiang-Yun Shih, S.C. Wang, Huang-Hsiung Huang, Wei-Hung Kuo, Chien-Chung Lin, Shu-Mei Yang, Yu-Ming Huang, Chung-Ping Huang, Shun-Chieh Hsu, Yen-Hsiang Fang
Publikováno v:
2019 IEEE Photonics Conference (IPC).
Highly efficient ultraviolet micro LED arrays are demonstrated. Small devices (5 microns in size) suitable for high resolution (725 ppi) can be produced with low leakage current and good emission spectra stability. A 10 by 10 array is achieved with p
Autor:
Chien-Chung Lin, Yi Yang Lee, Sheng Kai Huang, Shou Wei Wang, Shao Yi Weng, Hao-Chung Kuo, Huang Hsiung Huang, Yi-Lin Tsai
Publikováno v:
Optics Express. 28:38184
In this study, AlGaInP red light emitting diodes with sizes ranging from 5 to 50 micrometers were fabricated and characterized. The atomic layer deposition technology is applied to coat a layer of silicon dioxide for passivation and protection. The t
Autor:
C. E. Lee, S. C. Wang, C.W. Chiu, Tien-Chang Lu, K. M. Leung, H. C. Kuo, Huang-Hsiung Huang, Chung-Yu Lai, Chuan-Hsien Lin
Publikováno v:
IEEE Photonics Technology Letters. 19:565-567
We have designed and fabricated a new type of GaN-based thin-film vertical-injection light-emitting diode (LED) with TiO2-SiO 2 omnidirectional reflector (ODR) and n-GaN roughness. The associated ODR designed for LED operation wavelength at 455 nm wa
Highly Efficient InGaN-Based Light Emitting Devices grown on Nanoscale Patterned Substrates by MOCVD
Autor:
Chien-Chung Lin, Huang-Hsiung Huang, Shih-Pang Chang, Ching Hsueh Chiu, Hao-Chung Kuo, Chun-Yen Chang
Publikováno v:
Scopus-Elsevier
Highly efficient InGaN-base light emitting diodes are crucial for next generation solid state lighting. However, drawbacks in substrate materials such as lattice and thermal expansion coefficient mismatches hold back the lamination efficiency improve