Zobrazeno 1 - 10
of 117
pro vyhledávání: '"Huang-Chun Wen"'
Publikováno v:
In Journal of Asian Earth Sciences 15 October 2021 220
Autor:
Huang-Chun Wen, 溫凰君
90
In this thesis, we have proposed a new ultra-shallow junction formation method for nano-MOS technology applications. As device dimension scales down, the short channel effects become more serious. Formation of ultra-shallow junctions is essen
In this thesis, we have proposed a new ultra-shallow junction formation method for nano-MOS technology applications. As device dimension scales down, the short channel effects become more serious. Formation of ultra-shallow junctions is essen
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/80161201359276452221
Autor:
Paul R. Berger, Peide D. Ye, Willy Rachmady, Siddharth Krishnan, Francesca Iacopi, Jörg Schulze, Huang-Chun Wen, Muhammad Mustafa Hussain
Thermal budgets hinder leading-edge ultra-scaled and novel designs, and moving to reduced temperature processing is becoming an acute impediment globally.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc0b258987f0a96e7776ffa010866ee4
https://hdl.handle.net/10453/150636
https://hdl.handle.net/10453/150636
Akademický článek
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Autor:
Chang, Chuan-Hsun, Huang, Chun-Wen, Huang, Chien-Ming, Ou, Tzu-Chi, Chen, Chu-Chieh, Lu, You-Min
Publikováno v:
Medicine
As research progressed, the recommended duration of endocrine therapy for breast cancer patients has been extended from 5 to 10 years. This study aimed to investigate how the duration of endocrine medication and therapy affect survival rate in the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4c9ca3da20841d411d6463e2455a917e
http://europepmc.org/articles/PMC6824710
http://europepmc.org/articles/PMC6824710
Autor:
Theodore S. Moise, Huang-Chun Wen, T. Wang, Scott R. Summerfelt, M. Ball, John A. Rodriguez, K. R. Udayakumar, Tamer San, C. Zhou, R. Bailey, M. Wiegand, T. Graf
Publikováno v:
2016 IEEE 8th International Memory Workshop (IMW).
Systematic evaluation of ferroelectric memory (FRAM) data retention mechanisms under high temperature exposure are reported. The FRAM devices are embedded on ultra-low power, analog-enhanced 130nm and 180nm CMOS technologies. Capability of the FRAM t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b99268ac240cb5b220873c75121edb74
https://doi.org/10.1109/imw.2016.7495274
https://doi.org/10.1109/imw.2016.7495274
Autor:
Mingyue Zhao, R. A. Chapman, H. J. Stiegler, Obradovic Borna J, Gazi A. Mahmud, Kurtis D. Cantley, Huang-Chun Wen, Eric M. Vogel, P. G. Fernandes
Publikováno v:
Sensors and Actuators B: Chemical. 161:163-170
A user-friendly behavioral macromodel for biological response of FET-based transistors has been developed for use with commercial SPICE versions and will enable circuit level analysis of biosensor chips. The model is based on the physically realistic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2787243c43530c4e41e794e93670e87e
https://doi.org/10.1016/j.snb.2011.10.002
https://doi.org/10.1016/j.snb.2011.10.002
Autor:
Yves J. Chabal, R. A. Chapman, H. J. Stiegler, Huang-Chun Wen, Eric M. Vogel, P. G. Fernandes, Oliver Seitz
Publikováno v:
IEEE Transactions on Electron Devices. 58:1752-1760
The potential and electric field boundary conditions for the Gouy-Chapman model of the electrolyte diffuse layer are used to properly couple the potentials in the silicon-on-insulator-based metal-oxide-semiconductor field-effect transistor to the ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07672d7a549c0ba7937a05ee946f0fa8
https://doi.org/10.1109/ted.2011.2132134
https://doi.org/10.1109/ted.2011.2132134
Autor:
JJ Chambers, Huang-Chun Wen
Publikováno v:
MRS Bulletin. 36:101-105
Research on contact materials in silicon semiconductor devices has recently gained significant momentum due to the increasing performance demands as the complementary metal oxide semiconductor technology advances. Applications include transistor mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6b43cd732deab15006ba00f6275034d
https://doi.org/10.1557/mrs.2011.8
https://doi.org/10.1557/mrs.2011.8
Autor:
J. Price, Gennadi Bersuker, Hsing-Huang Tseng, Onise Sharia, Patrick M. Lenahan, Alexander A. Demkov, P. Lysaght, Jason T. Ryan, Huang-Chun Wen, Kisik Choi, C. Park
Publikováno v:
IEEE Transactions on Electron Devices. 57:2047-2056
The effect of flatband-voltage reduction [roll-off (R-O)], which limits fabrication options for obtaining the needed band-edge threshold voltage values in transistors with highly scaled metal/high- k dielectric gate stacks, is discussed. The proposed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4042b9d54ac502787b0ba69ec64a5c2
https://doi.org/10.1109/ted.2010.2051863
https://doi.org/10.1109/ted.2010.2051863