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pro vyhledávání: '"Huang Zm (Huang Zhi-Ming)"'
Autor:
Gui Ys (Gui Yong-Sheng), HL Gao, T Lin, DL Li, LY Shang, Zhu B (Zhu Bo), Huang Zm (Huang Zhi-Ming), SL Guo, Cui Lj (Cui Li-Jie), WZ Zhou, JH Chu
Publikováno v:
Acta Physica Sinica. 56:4143
Magneto-transport measurements have been carried out on a Si δ-doped In0.65Ga0.35As/In0.52Al0.48As metamorphic high-electron-mobility transistor with InP substrate in a temperature range between 1.5 and 60K under magnetic field up to 13T. We studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::484af191085a16797f5021bcfcd25363
https://doi.org/10.7498/aps.56.4143
https://doi.org/10.7498/aps.56.4143
