Zobrazeno 1 - 10
of 129
pro vyhledávání: '"Huang Xuanqi"'
Autor:
Zhou, Jingan, Chen, Hong, Fu, Houqiang, Fu, Kai, Deng, Xuguang, Huang, Xuanqi, Yang, Tsung-Han, Montes, Jossue A., Yang, Chen, Qi, Xin, Zhang, Baoshun, Zhang, Xiaodong, Zhao, Yuji
This paper reports the first demonstration of beta-phase gallium oxide as optical waveguides on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). The propagation losses from visible to ultraviolet spectra were comprehensiv
Externí odkaz:
http://arxiv.org/abs/1910.10880
Autor:
Chen, Hong, Zhou, Jingan, Li, Dongying, Chen, Dongyu, Vinod, Abhinav K., Fu, Houqiang, Huang, Xuanqi, Yang, Tsung-Han, Montes, Jossue A., Fu, Kai, Yang, Chen, Ning, Cun-Zheng, Wong, Chee Wei, Armani, Andrea M., Zhao, Yuji
On-chip ultraviolet to infrared (UV-IR) spectrum frequency metrology is of crucial importance as a characterization tool for fundamental studies on quantum physics, chemistry, and biology. Due to the strong material dispersion, traditional techniques
Externí odkaz:
http://arxiv.org/abs/1908.04719
Autor:
Montes, Jossue, Yang, Chen, Fu, Houqiang, Yang, Tsung-Han, Huang, Xuanqi, Zhou, Jingan, Chen, Hong, Fu, Kai, Zhao, Yuji
Several pn junctions were constructed from mechanically exfoliated ultrawide bandgap (UWBG) beta-phase gallium oxide (\b{eta}-Ga2O3) and p-type gallium nitride (GaN). The mechanical exfoliation process, which is described in detail, is similar to tha
Externí odkaz:
http://arxiv.org/abs/1812.05729
Autor:
Zhao, Yuji, Xu, Mingfei, Huang, Xuanqi, Lebeau, Justin, Li, Tao, Wang, Dawei, Fu, Houqiang, Fu, Kai, Wang, Xinqiang, Lin, Jingyu, Jiang, Hongxing
Publikováno v:
In Materials Today Energy January 2023 31
Autor:
Chen, Hong, Fu, Houqiang, Huang, Xuanqi, Montes, Jossue A., Yang, Tsung-Han, Baranowski, Izak, Zhao, Yuji
We report, for the first time, the characterizations on optical nonlinearities of beta-phase gallium oxide (\b{eta}-Ga2O3), where both (010) \b{eta}-Ga2O3 and (-201) \b{eta}-Ga2O3 were examined for two-photon absorption (TPA) coefficient, Kerr refrac
Externí odkaz:
http://arxiv.org/abs/1712.01390
Autor:
Fu, Houqiang, Chen, Hong, Huang, Xuanqi, Baranowski, Izak, Montes, Jossue, Yang, Tsung-Han, Zhao, Yuji
Publikováno v:
IEEE Transactions on Electron Devices, 2018
Vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes (SBDs) were fabricated on single-crystal substrates grown by edge-defined film-fed growth (EFG) method. High resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) confirmed
Externí odkaz:
http://arxiv.org/abs/1712.01318
Autor:
Nicoletto, Marco, Caria, Alessandro, De Santi, Carlo, Buffolo, Matteo, Huang, Xuanqi, Fu, Houqiang, Chen, Hong, Zhao, Yuji, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Publikováno v:
In Microelectronics Reliability November 2022 138
Autor:
Fu, Houqiang, Fu, Kai, Yang, Chen, Liu, Hanxiao, Hatch, Kevin A., Peri, Prudhvi, Herath Mudiyanselage, Dinusha, Li, Bingjun, Kim, Tae-Hyeon, Alugubelli, Shanthan R., Su, Po-Yi, Messina, Daniel C., Deng, Xuguang, Cheng, Chi-Yin, Vatan Meidanshahi, Reza, Huang, Xuanqi, Chen, Hong, Yang, Tsung-Han, Zhou, Jingan, Armstrong, Andrew M., Allerman, Andrew A., Yu, Edward T., Han, Jung, Goodnick, Stephen M., Smith, David J., Nemanich, Robert J., Ponce, Fernando A., Zhao, Yuji
Publikováno v:
In Materials Today October 2021 49:296-323
Autor:
Huang, Xuanqi, Li, Dongying, Su, Po-Yi, Fu, Houqiang, Chen, Hong, Yang, Chen, Zhou, Jingan, Qi, Xin, Yang, Tsung-Han, Montes, Jossue, Deng, Xuguang, Fu, Kai, DenBaars, Steven P., Nakamura, Shuji, Ponce, Fernando A., Ning, Cun-Zheng, Zhao, Yuji
Publikováno v:
In Nano Energy October 2020 76
Publikováno v:
In Journal of Luminescence March 2019 207:53-57