Zobrazeno 1 - 10
of 93
pro vyhledávání: '"Huang Xin-Fan"'
Autor:
Qian, Xin-Ye, Chen, Kun-Ji, Wang, Yue-Fei, Jiang, Xiao-Fan, Ma, Zhong-Yuan, Fang, Zhong-Hui, Xu, Jun, Huang, Xin-Fan
Publikováno v:
In Journal of Non-Crystalline Solids 1 September 2012 358(17):2344-2347
Publikováno v:
In Applied Surface Science 2007 253(22):9035-9038
Autor:
Chen Kun-Ji, Xu Jun, Li Wei, Wang Dan-Qing, Dong Heng-Ping, Ma Zhong-Yuan, Huang Rui, Huang Xin-Fan
Publikováno v:
Chinese Physics Letters. 25:4147-4150
Room-temperature deposited amorphous silicon nitride (a-SiNx:H) films exhibit intense green light emission after post-treated by plasma oxidation, thermal oxidation and natural oxidation, respectively. All the photolumines-cence (PL) spectra are peak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27c0fc8a9bf40406ea416af34cff0f11
https://doi.org/10.1088/0256-307x/25/11/084
https://doi.org/10.1088/0256-307x/25/11/084
Autor:
Huang Xin-Fan, Wang Xiang, Ding Hong-Lin, Yu Lin-Wei, Li Wei, Chen Kun-Ji, Zhang Xian-Gao, Huang Jian
Publikováno v:
Chinese Physics Letters. 25:2690-2693
An a-SiNx/nanocrystalline silicon [(nc-Si)/a-SiNx] sandwiched structure is fabricated in a plasma enhanced chemical vapour deposition (PECVD) system at low temperature (250° C). The nc-Si layer is fabricated from a hydrogen-diluted silane mixture ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeeaf4f91287f0760f75d998abef66c2
https://doi.org/10.1088/0256-307x/25/7/099
https://doi.org/10.1088/0256-307x/25/7/099
Autor:
Huang Xin-Fan, Ding Hong-Lin, Yu Lin-Wei, Li Wei, Huang Jian, Wang Xiang, Zhang Xian-Gao, Xu Jun
Publikováno v:
Chinese Physics Letters. 25:1094-1097
The a-SiNx/nanocrystalline silicon (nc-Si)/a-SiNx sandwiched structures with asymmetric double-barrier are fabricated in a plasma enhanced chemical vapour deposition (PECVD) system on p-type Si substrates. The nc-Si layer in thickness 5nm is fabricat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ab2bc33d08088a51e79ea70f3b32917
https://doi.org/10.1088/0256-307x/25/3/078
https://doi.org/10.1088/0256-307x/25/3/078
Autor:
Chen De-Yuan, Guo Si-Hua, Xu Ling, Huang Xin-Fan, Wei De-Yuan, Yao Yao, Ma Zhong-Yuan, Huang Rui, Xu Jun, Zhou Jiang, Chen Kun-Ji, Feng Duan, Li Wei
Publikováno v:
Chinese Physics B. 17:303-306
Intensive blue photoluminescence (PL) was observed at room temperature from the nanocrystalline-Si/SiO2 (nc-Si/SiO2) multilayers (MLs) obtained by thermal annealing of SiO/SiO2 MLs for the first time. By controlling the size of nc-Si formed in SiO su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7d2c882156c81efaa1c0b4900d5f616
https://doi.org/10.1088/1674-1056/17/1/053
https://doi.org/10.1088/1674-1056/17/1/053
Autor:
Chen Kun-Ji, Han Pei-Gao, Xu Ling, Chen De-Yuan, Ma Zhong-Yuan, Huang Xin-Fan, Xia Zheng-Yue, Wei De-Yuan, Xu Jun
Publikováno v:
Chinese Physics Letters. 24:2657-2660
Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2e461d30803fcea4426743a3fbdea0b
https://doi.org/10.1088/0256-307x/24/9/054
https://doi.org/10.1088/0256-307x/24/9/054
Autor:
Ma Zhong-Yuan, Han Pei-Gao, Li Wei, Chen De-Yuan, Wei De-Yuan, Qian Bo, Xu Jun, Xu Ling, Huang Xin-Fan, Chen Kun-Ji, Feng Duan
Publikováno v:
Chinese Physics Letters. 24:2064-2067
We investigate the properties of light emission from amorphous-Si:H/SiO2 and nc-Si/SiO2 multilayers (MLs). The size dependence of light emission is well exhibited when the a-Si:H sublayer thickness is thinner than 4 nm and the interface states are we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7a6c297b7a14b7455fafe9b276b5e01
https://doi.org/10.1088/0256-307x/24/7/076
https://doi.org/10.1088/0256-307x/24/7/076
Autor:
Xu Jun, Han Pei-Gao, Chen De-Yuan, Chen San, Qian Bo, Ma Zhong-Yuan, Chen Kun-Ji, Huang Xin-Fan, Feng Duan, Li Wei, Xia Zheng-Yue
Publikováno v:
Chinese Physics. 16:1410-1416
Enhanced photoluminescence (PL) at room temperature from thermally annealed a-Si:H/SiO2 multilayers is observed through the step-by-step thermal post-treatment. The correlation between the PL and the crystallization process is studied using temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6770705441128d4205944b1cf038fb48
https://doi.org/10.1088/1009-1963/16/5/040
https://doi.org/10.1088/1009-1963/16/5/040
Autor:
Chen Kun-Ji, Li Wei, Qian Bo, Xu Jun, Chen San, Ma Zhong-Yuan, Liu Yan-Song, Huang Xin-Fan, Cen Zhan-Hong
Publikováno v:
Chinese Physics Letters. 23:1302-1305
We report the crystallization and photoluminescence (PL) properties of amorphous Si:H/SiNx:H multilayer (ML) films treated by step-by-step laser annealing. The results of Raman measurements show that the nanocrystalline Si (nc-Si) grains are formed i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3a6150afd34a7749d04fe41a7c3ef87
https://doi.org/10.1088/0256-307x/23/5/066
https://doi.org/10.1088/0256-307x/23/5/066