Výsledky vyhledávání - "Huang Jinhai"

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On the material genome of wurtzite ferroelectrics

Autor: Zhou, Zijian, Huang, Jinhai, Xue, Kan-Hao, Yu, Heng, Yang, Shengxin, Liu, Shujuan, Wang, Yiqun, Miao, Xiangshui

As the dielectric film thickness shrinks to ~10 nm, some traditional wurtzite piezoelectric materials demonstrate ferroelectricity through element doping. Among them, Sc doped AlN and Mg doped ZnO are the most famous examples. While it is widely ackn

Externí odkaz: http://arxiv.org/abs/2410.02471

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Akademický článek

Research Progress on Chest CT Features of the Preserved Ratio Impaired Spirometry Population

Autor: HUANG Jinhai, LI Yun, GAO Yi

Publikováno v: Zhongguo quanke yixue, Vol 27, Iss 29, Pp 3679-3684 (2024)

Preserved ratio impaired spirometry (PRISm) is a common pulmonary functional impairment, considered a pre-chronic obstructive pulmonary disease stage and has received increased attention from the academic community in recent years. Despite a comprehe

Externí odkaz: https://doaj.org/article/67471ddff7a040fa86b6f40d23f05787

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Impact of Zr substitution on the electronic structure of ferroelectric hafnia

Autor: Huang, Jinhai, Mao, Ge-Qi, Xue, Kan-Hao, Yang, Shengxin, Ye, Fan, Sun, Huajun, Miao, Xiangshui

Publikováno v: Journal of Applied Physics 133, 184101 (2023)

$\mathrm{HfO_2}$-based dielectrics are promising for nanoscale ferroelectric applications, and the most favorable material within the family is Zr-substituted hafnia, i.e., $\mathrm{Hf_{1-x}Zr_xO_2}$ (HZO). The extent of Zr substitution can be great,

Externí odkaz: http://arxiv.org/abs/2302.03852

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On the self-consistency of DFT-1/2

Autor: Cui, Hanli, Yang, Shengxin, Xue, Kan-Hao, Huang, Jinhai, Miao, Xiangshui

Publikováno v: Journal of Chemical Physics 158, 094103 (2023)

DFT-1/2 is an efficient band gap rectification method for density functional theory (DFT) under local density approximation (LDA) or generalized gradient approximation. It was suggested that non-self-consistent DFT-1/2 should be used for highly ionic

Externí odkaz: http://arxiv.org/abs/2209.01636

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Designing wake-up free ferroelectric capacitors based on the $\mathrm{HfO_2/ZrO_2}$ superlattice structure

Autor: Bai, Na, Xue, Kan-Hao, Huang, Jinhai, Yuan, Jun-Hui, Wang, Wenlin, Mao, Ge-Qi, Zou, Lanqing, Yang, Shengxin, Lu, Hong, Sun, Huajun, Miao, Xiangshui

Publikováno v: Advanced Electronic Materials 9, 2200737 (2023)

The wake-up phenomenon widely exists in hafnia-based ferroelectric capacitors, which causes device parameter variation over time. Crystallization at higher temperatures have been reported to be effective in eliminating wake-up, but high temperature m

Externí odkaz: http://arxiv.org/abs/2206.14393

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