Zobrazeno 1 - 10
of 722
pro vyhledávání: '"Huang Chung-Cheng"'
Autor:
Lim, Wei-Xiong a, Yeh, Wen-Shuo b, Lee, Sieh-Yang a, Chuang, Yi-Hsuan a, Wang, Jing-Houng b, Huang, Chung-Cheng a, 1, ⁎, Chang, Ching-Di a, 1, ⁎
Publikováno v:
In Clinics and Research in Hepatology and Gastroenterology August 2024 48(7)
Publikováno v:
Thrombosis Journal, Vol 6, Iss 1, p 5 (2008)
Abstract Background and purpose The relationship of D-dimer and deep-vein thrombosis (DVT) after total knee arthroplasty (TKA) remains controversial. The purpose of this study was to assess the value of D-dimer in the detection of early DVT after TKA
Externí odkaz:
https://doaj.org/article/3eac456c191744f9a5de989bc90da9bd
Autor:
Hao-Tung Chung, Yu-Ming Pan, Nein-Chih Lin, Bo-Jheng Shih, Chih-Chao Yang, Chang-Hong Shen, Huang-Chung Cheng, Kuan-Neng Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 262-268 (2023)
This paper proposed a fabrication of p-type Germanium (Ge) tri-gate field-effect transistors (Tri-gate FETs) via green nanosecond laser crystallization (GNSLC) and counter doping (CD). By using the GNSLC, the nano-crystalline-Ge (nc-Ge) with a grain
Externí odkaz:
https://doaj.org/article/ef4cc10c6b1946188bd1a720f82eb48b
Akademický článek
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Autor:
Yang, Tsung-Hsun a, Lee, Yan-Yuh a, Huang, Chung-Cheng b, Huang, Yu-Chi a, Chen, Po-Cheng a, Hsu, Chia-Hao a, Wang, Lin-Yi a, *, Chou, Wen-Yi c, d, **
Publikováno v:
In Journal of Shoulder and Elbow Surgery November 2018 27(11):2038-2044
Autor:
Yi-Shao Li, Chun-Yi Wu, Chan-Yu Liao, Jun-Dao Luo, Kai-Chi Chuang, Wei-Shuo Li, Huang-Chung Cheng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 544-550 (2019)
The crystallinity of polycrystalline germanium (poly-Ge) films were demonstrated through continuous-wave laser crystallization (CLC) with Gaussian-distribution beam profile. The different grain sizes of CLC poly-Ge were observed in their three crysta
Externí odkaz:
https://doaj.org/article/57dd7eb462054763a839826621149d77
Autor:
Kai-Chi Chuang, Chi-Yan Chu, He-Xin Zhang, Jun-Dao Luo, Wei-Shuo Li, Yi-Shao Li, Huang-Chung Cheng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 589-595 (2019)
Resistive random access memory (RRAM) devices with analog resistive switching are expected to be beneficial for neuromorphic applications, and consecutive voltage sweeps or pulses can be applied to change the device conductance and behave synaptic ch
Externí odkaz:
https://doaj.org/article/aa4434a21e7041b2b8f993cd181cf99c
Autor:
Lee, Chen-Chang 1, 2, Chen, Po-Chou 1, Chen, Hong-Hwa 3, Huang, Chung-Cheng 1, Lin, Li-Han 1, Ng, Shu-Hang 1, Chen, Min-Chi 4, Ko, Sheung-Fat 1, ∗
Publikováno v:
In Clinical Colorectal Cancer September 2017 16(3):187-194
Autor:
Wang, Jun-Wen a, ∗, Chen, Bradley b, Lin, Po-Chun a, Yen, Shih-Hsiang a, Huang, Chung-Cheng c, Kuo, Feng-Chih a
Publikováno v:
In The Journal of Arthroplasty March 2017 32(3):801-806
Autor:
Kai-Chi Chuang, Kuan-Yu Lin, Jun-Dao Luo, Wei-Shuo Li, Yi-Shao Li, Chi-Yan Chu, Huang-Chung Cheng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 622-626 (2018)
In this paper, a resistive random access memory (RRAM) device using a field-enhanced elevated-film-stack (EFS) structure with a 15-nm-thick HfOx dielectric layer was fabricated and measured to achieve a forming voltage (VForming) of 2.04 V, set volta
Externí odkaz:
https://doaj.org/article/b7c38ad67fa14d26bf6da49a173e678b