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pro vyhledávání: '"Huang, Biqin"'
Autor:
Huang, Biqin.
Publikováno v:
Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 201 p.
Thesis (Ph.D.)--University of Delaware, 2007.
Principal faculty advisor: Ian Appelbaum, Dept. of Electrical and Computer Engineering. Includes bibliographical references.
Principal faculty advisor: Ian Appelbaum, Dept. of Electrical and Computer Engineering. Includes bibliographical references.
Externí odkaz:
http://proquest.umi.com/pqdweb?did=1459914011&sid=17&Fmt=2&clientId=8331&RQT=309&VName=PQD
Autor:
Huang, Biqin.
Publikováno v:
Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 57 p.
Thesis (M.E.E.)--University of Delaware, 2007.
Principal faculty advisor: Ian Appelbaum, Dept. of Electrical and Computer Engineering. Includes bibliographical references.
Principal faculty advisor: Ian Appelbaum, Dept. of Electrical and Computer Engineering. Includes bibliographical references.
Externí odkaz:
http://proquest.umi.com/pqdweb?did=1338919421&sid=9&Fmt=2&clientId=8331&RQT=309&VName=PQD
Autor:
Borselli, Matthew G., Eng, Kevin, Ross, Richard S., Hazard, Thomas M., Holabird, Kevin S., Huang, Biqin, Kiselev, Andrey A., Deelman, Peter W., Warren, Leslie D., Milosavljevic, Ivan, Schmitz, Adele E., Sokolich, Marko, Gyure, Mark F., Hunter, Andrew T.
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of individual q
Externí odkaz:
http://arxiv.org/abs/1408.0600
Autor:
Borselli, Matthew G., Eng, Kevin, Croke, Edward T., Maune, Brett M., Huang, Biqin, Ross, Richard S., Kiselev, Andrey A., Deelman, Peter W., Alvarado-Rodriguez, Ivan, Schmitz, Adele E., Sokolich, Marko, Holabird, Kevin S., Hazard, Thomas M., Gyure, Mark F., Hunter, Andrew T.
Publikováno v:
Appl. Phys. Lett. 99, 063109 (2011)
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm tha
Externí odkaz:
http://arxiv.org/abs/1106.6285
Autor:
Huang, Biqin, Appelbaum, Ian
Publikováno v:
Phys. Rev. B Rapid Comm. 82 241202(R) (2010)
Drift-diffusion theory - which fully describes charge transport in semiconductors - is also universally used to model transport of spin-polarized electrons in the presence of longitudinal electric fields. By transforming spin transit time into spin o
Externí odkaz:
http://arxiv.org/abs/1007.0233
Publikováno v:
Appl. Phys. Lett. 93, 162508 (2008)
Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in semiconductor devices. However, when spin dephasing is very strong, Hanl
Externí odkaz:
http://arxiv.org/abs/0809.2225
Publikováno v:
Appl. Phys. Lett. 92, 142507 (2008)
Spin precession and dephasing ("Hanle effect") provides an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with experimental data from drift-dominated silicon spin-transport devices, il
Externí odkaz:
http://arxiv.org/abs/0801.3231
Autor:
Huang, Biqin, Appelbaum, Ian
Publikováno v:
Phys. Rev. B 77, 165331 (2008)
A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. It is found that in the ohmic reg
Externí odkaz:
http://arxiv.org/abs/0801.1790
Publikováno v:
Phys. Rev. B 78, 165329 (2008)
We demonstrate the injection and transport of spin-polarized electrons through n-type doped silicon with in-plane spin-valve and perpendicular magnetic field spin precession and dephasing ("Hanle effect") measurements. A voltage applied across the tr
Externí odkaz:
http://arxiv.org/abs/0711.4828
Publikováno v:
Phys. Rev. Lett. 99, 177209 (2007)
We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerati
Externí odkaz:
http://arxiv.org/abs/0706.0866