Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Huan-Ping Su"'
Autor:
Huan-Ping Su, 蘇煥評
96
The purpose of this paper is to apply OKID (Observer/Kalman Filter Identification), which is an approach for state space model parameter estimation, to the modeling of bio-systems. With the identified system matrices and observer gain matrix
The purpose of this paper is to apply OKID (Observer/Kalman Filter Identification), which is an approach for state space model parameter estimation, to the modeling of bio-systems. With the identified system matrices and observer gain matrix
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/69784360847209514808
Autor:
Huan-Ping Su, 蘇桓平
83
In this thesis, we propose three novel ultrathin dielectrics for ULSI applications. For gate dielectrics, a novel technique to fabricate ultrathin gate dielectrics by nitridizing SiO2 only in NH3 at very low pressure (about 0.1 Torr) has been
In this thesis, we propose three novel ultrathin dielectrics for ULSI applications. For gate dielectrics, a novel technique to fabricate ultrathin gate dielectrics by nitridizing SiO2 only in NH3 at very low pressure (about 0.1 Torr) has been
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/92181506385804218913
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3cf262ebfe8d0360982826fcbd40c4d
https://doi.org/10.1109/ectc51906.2022.00353
https://doi.org/10.1109/ectc51906.2022.00353
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
In this article, the polyimide formation at high pressure for advanced assembly technology is reported for the first time. Polyimides are formed in a pneumatic oven for evaluation of voids and cycle times. For comparison and production evaluation, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11af5a515343f288f071961cd9a3a2bb
https://doi.org/10.1109/ectc32696.2021.00333
https://doi.org/10.1109/ectc32696.2021.00333
Autor:
Hung-Chang Hsiao, Andy Rk Chang, Wei-An Shih, Huan-Ping Su, Chia-Chee Lee, Chia-Ping Tsai, Yen-Zhou Huang, Kuan-Po Tseng, Michael Hsu, Hsin-Yin Lee, Yu-Ling Chen
Publikováno v:
ICPADS
We present in this paper a novel infrastructural service based on Hadoop for big data storage and computing in a Taiwan's semiconductor wafer fabrication foundry. The service is named Hadoop data service (HDS), which has been built and operated in pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fe9f2ac5cea1e6508bc68034bf44e2c
https://doi.org/10.1109/padsw.2018.8644546
https://doi.org/10.1109/padsw.2018.8644546
Publikováno v:
Journal of The Electrochemical Society. 144:3288-3293
To be utilized in the high density dynamic random access memory devices, low-pressure dry oxidation of the very thin nitrides has been performed to successfully obtain the ultrathin capacitors' dielectrics with the effective oxide thickness (t ox,eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7445654845967f1a7a9d476572926e04
https://doi.org/10.1149/1.1837999
https://doi.org/10.1149/1.1837999
Superior low-pressure-oxidized Si3N4 films on rapid-thermal-nitrided poly-Si for high-density DRAM's
Publikováno v:
IEEE Electron Device Letters. 16:509-511
High-performance stacked storage capacitors with small effective-oxide-thickness (t/sub ox,eff/) as thin as 37 /spl Aring/ has been achieved using low-pressure-oxidized nitride films deposited on NH/sub 3/-nitrided poly-Si electrodes. The capacitors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dd6e0c849b52aad0387361821b2df70
https://doi.org/10.1109/55.468283
https://doi.org/10.1109/55.468283
Publikováno v:
IEEE Electron Device Letters. 16:250-252
A novel dielectric fabricated by thermal oxidation of ultrathin rugged polysilicon film is proposed for nonvolatile memories. Different roughness degrees for the top and bottom interfaces of this dielectric are detected by the atomic-force-microscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdc9a92c676bb66042f8937ef71c57be
https://doi.org/10.1109/55.790725
https://doi.org/10.1109/55.790725
Publikováno v:
IEEE Electron Device Letters. 15:440-442
High-performance superthin oxide/nitride/oxide (O/N/O) stacked dielectrics have been successfully achieved by oxidizing thin nitride films in low-pressure dry-oxygen at 850/spl deg/C for 30 min. Since the nitrides exhibit a better oxidation resistanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7a95fd830ab07a82529fd2fe4369613
https://doi.org/10.1109/55.334660
https://doi.org/10.1109/55.334660
Publikováno v:
Japanese Journal of Applied Physics. 34:1713
High-performance superthin oxide/nitride/oxide (O/N/O) stacked dielectrics have been successfully achieved by oxidizing ultrathin nitride films in low-pressure dry oxygen at 850° C for 30 min. The low leakage current and the high reliability of this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a5019877bd5d887c3d170157f7e4e09
https://doi.org/10.1143/jjap.34.1713
https://doi.org/10.1143/jjap.34.1713