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pro vyhledávání: '"Huan Hsien Yeh"'
Publikováno v:
IEEE Transactions on Magnetics. 50:1-4
The In 10 Ge x Sb 52-x Sn 23 Te 15 films (x = 2, 5, 7, and 9) were grown on silicon wafers, glass, and polycarbonate substrates at room temperature by dc magnetron sputtering. The thickness of In 10 Ge x Sb 52-x Sn 23 Te 15 films is fixed at 20 nm. T
Autor:
Wei-Che Shih, Ying-Chung Chen, Chien-Chuan Cheng, Kuo-Sheng Kao, Da-Long Cheng, Po-Wei Ting, Huan-Hsien Yeh
Publikováno v:
Sensors & Materials; 2017, Vol. 29 Issue 4, p405-410, 6p