Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Huaixin Guo"'
Publikováno v:
Micromachines, Vol 13, Iss 9, p 1486 (2022)
Nanocrystalline diamond capping layers have been demonstrated to improve thermal management for AlGaN/GaN HEMTs. To improve the RF devices, the application of the technology, the technological approaches and device characteristics of AlGaN/GaN HEMTs
Externí odkaz:
https://doaj.org/article/7b1430751f3c47a8a679479473457104
Publikováno v:
Micromachines, Vol 11, Iss 1, p 76 (2020)
The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high
Externí odkaz:
https://doaj.org/article/b58d10f26a87497da21ad38a020c78fc
Publikováno v:
Advanced Theory and Simulations. 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d836f43d28ca0434ca5e75d5c3f7b617
https://doi.org/10.1002/adts.202200881
https://doi.org/10.1002/adts.202200881
Autor:
Zhiwei Zha, Jianyuan Zhu, Xiaofeng Yang, Xu Huang, Huaixin Guo, An Xie, Xiangjun Lu, Zhiwei Fu
Publikováno v:
2022 23rd International Conference on Electronic Packaging Technology (ICEPT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd3ee9461db97430d8a9e3c2cabf939
https://doi.org/10.1109/icept56209.2022.9872740
https://doi.org/10.1109/icept56209.2022.9872740
Publikováno v:
Journal of Crystal Growth. 610:127155
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcbe2a7bd13c37a06e646d4cd0e8ee64
https://doi.org/10.1016/j.jcrysgro.2023.127155
https://doi.org/10.1016/j.jcrysgro.2023.127155
Autor:
Wen Shang, Huanbei Chen, Chao Chang, Hao Xu, Jingyi Zhang, Benwei Fu, Jiale Xu, Peng Tao, Tao Deng, Huaixin Guo, Chengyi Song
Publikováno v:
Experimental Heat Transfer. 35:183-195
We report the development of transparent high-thermal-conductivity nanofluids for enhanced flow cooling of solid-state laser crystal rods. The transparent nanofluids were prepared by dispersing cit...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a50d41d921f7794323536157fa7e7b41
https://doi.org/10.1080/08916152.2020.1829749
https://doi.org/10.1080/08916152.2020.1829749
Publikováno v:
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bf48a9f84d0bd48b47775085d09e078
https://doi.org/10.1109/imws-amp53428.2021.9643895
https://doi.org/10.1109/imws-amp53428.2021.9643895
Publikováno v:
2021 IEEE 5th Conference on Energy Internet and Energy System Integration (EI2).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::654a97df20e8ca1c503d88bc3fda9b52
https://doi.org/10.1109/ei252483.2021.9713450
https://doi.org/10.1109/ei252483.2021.9713450
Autor:
Wen Shang, Huanbei Chen, Jingyi Zhang, Benwei Fu, Peng Tao, Tao Deng, Chengyi Song, Huaixin Guo
Publikováno v:
Current Opinion in Chemical Engineering. 25:51-56
Direct absorption-based solar collectors, which rely on volumetric absorption of sunlight by optical nanofluids, have emerged as a superior way to conventional surface absorption-based collectors for harvesting solar-thermal energy. In this short rev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::193e5f46ff258abb37bee7ecda5d3a90
https://doi.org/10.1016/j.coche.2019.07.002
https://doi.org/10.1016/j.coche.2019.07.002
Publikováno v:
Diamond and Related Materials. 95:28-35
The CVD growth of polycrystalline diamond (PCD) on GaN is a novel and effective approach to improve heat dissipation for high power GaN-based transistors. However, the growth-induced spatial variation in PCD's thermal conductivity makes it difficult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51d6d9ebbfb8fb411f47622476138aa0
https://doi.org/10.1016/j.diamond.2019.03.020
https://doi.org/10.1016/j.diamond.2019.03.020