Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Huading Song"'
Publikováno v:
Quantum Frontiers, Vol 3, Iss 1, Pp 1-15 (2024)
Abstract This review aims to provide a comprehensive overview of the development and current understanding of GaAs and InAs heterostructures, with a special emphasis on achieving high material quality and high-mobility two-dimensional electron gases
Externí odkaz:
https://doaj.org/article/23793b99cde14b9eba45007eb3ff8651
Autor:
Huading Song, Zitong Zhang, Dong Pan, Donghao Liu, Zhaoyu Wang, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Dong E. Liu, Runan Shang, Jianhua Zhao, Hao Zhang
Publikováno v:
Physical Review Research, Vol 4, Iss 3, p 033235 (2022)
We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous studies, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer subband
Externí odkaz:
https://doaj.org/article/7573eb406908457c81d41b7a052ede0b
Autor:
Zhaoyu Wang, Huading Song, Dong Pan, Zitong Zhang, Wentao Miao, Ruidong Li, Zhan Cao, Gu Zhang, Lei Liu, Lianjun Wen, Ran Zhuo, Dong E. Liu, Ke He, Runan Shang, Jianhua Zhao, Hao Zhang
Publikováno v:
Physical review letters. 129(16)
Probing an isolated Majorana zero mode is predicted to reveal a tunneling conductance quantized at $2e^2/h$ at zero temperature. Experimentally, a zero-bias peak (ZBP) is expected and its height should remain robust against relevant parameter tuning,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::877964dfab974495eee4e79e6a01109d
https://pubmed.ncbi.nlm.nih.gov/36306766
https://pubmed.ncbi.nlm.nih.gov/36306766
Autor:
Jingzhi Fang, Huading Song, Bo Li, Ziqi Zhou, Juehan Yang, Benchuan Lin, Zhimin Liao, Zhongming Wei
Publikováno v:
Journal of Semiconductors. 43:092501
A magnetic semiconductor whose electronic charge and spin can be regulated together will be an important component of future spintronic devices. Here, we construct a two-dimensional (2D) Fe doped SnS2 (Fe-SnS2) homogeneous junction and investigate it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd4764914922fc66a8d7e3cfdeb29026
https://doi.org/10.1088/1674-4926/43/9/092501
https://doi.org/10.1088/1674-4926/43/9/092501
Autor:
Jakub, Jadwiszczak, Darragh, Keane, Pierce, Maguire, Conor P, Cullen, Yangbo, Zhou, Huading, Song, Clive, Downing, Daniel, Fox, Niall, McEvoy, Rui, Zhu, Jun, Xu, Georg S, Duesberg, Zhi-Min, Liao, John J, Boland, Hongzhou, Zhang
Publikováno v:
ACS nano. 13(12)
Two-dimensional (2D) layered semiconductors have recently emerged as attractive building blocks for next-generation low-power nonvolatile memories. However, challenges remain in the controllable fabrication of bipolar resistive switching circuit comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::68360fdbc29b61f5dadc14556d521bbb
https://pubmed.ncbi.nlm.nih.gov/31790198
https://pubmed.ncbi.nlm.nih.gov/31790198
Autor:
Jadwiszczak, Jakub, Keane, Darragh, Maguire, Pierce, Cullen, Conor P., Yangbo Zhou, Huading Song, Downing, Clive, Fox, Daniel, McEvoy, Niall, Rui Zhu, Jun Xu, Duesberg, Georg S., Zhi-Min Liao, Boland, John J., Hongzhou Zhang
Publikováno v:
ACS Nano; 12/24/2019, Vol. 13 Issue 12, p14262-14273, 12p