Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Hua-yueh Chiu"'
Autor:
Hua-yueh Chiu, 邱樺岳
95
This thesis presents the implementation of high-linearity, low-voltage CMOS Mixer at 5.8 GHz in TSMC standard 0.18um CMOS process. A novel frequency doubler and a miniaturized broadband hybrid ring by using WIN and Transcom InGaAs PHEMT proce
This thesis presents the implementation of high-linearity, low-voltage CMOS Mixer at 5.8 GHz in TSMC standard 0.18um CMOS process. A novel frequency doubler and a miniaturized broadband hybrid ring by using WIN and Transcom InGaAs PHEMT proce
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/97893051048244571238
Publikováno v:
Semiconductor Science and Technology. 22:1157-1160
A new STI (shallow trench isolation) with automatic top corner rounding (ATCR) to improve 90 nm CMOS narrow width device performance has been studied in detail. Experimental results show that the ATCR mitigates the inverse narrow width effect, and in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::201fbc0b66d17018cd05ffe58d33ddda
https://doi.org/10.1088/0268-1242/22/10/013
https://doi.org/10.1088/0268-1242/22/10/013
Publikováno v:
IEEE Microwave and Wireless Components Letters. 18:191-193
A 3-dB quadrature coupler which combines the advantages of broadside-coupling and coplanar waveguide structure suitable for a single-layer printed circuit board (PCB) circuit design is proposed. Compared to the recently published broadside-coupled st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::010eb260c8bc8d24728be85f221ac631
https://doi.org/10.1109/lmwc.2008.916805
https://doi.org/10.1109/lmwc.2008.916805
Autor:
Osbert Cheng, Ming-Shing Chen, Yen-Ting Chiang, Tung-Hsing Lee, Hua-Yueh Chiu, Yean-Kuen Fang
Publikováno v:
Journal of Physics D: Applied Physics. 41:195101
In the paper, for the first time, the effects of shallow trench isolation (STI) stress enhanced boron diffusion on band-to-band (BTBT) leakage and Vccmin of a 65 nm node low-power SRAM are investigated in detail. High temperature oxidation in the STI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::439039fb5b3e40da153a6b29f7366604
https://doi.org/10.1088/0022-3727/41/19/195101
https://doi.org/10.1088/0022-3727/41/19/195101
Publikováno v:
IEEE Microwave & Wireless Components Letters; Mar2008, Vol. 18 Issue 3, p191-193, 3p