Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Hua-Shuang Kong"'
Publikováno v:
physica status solidi c. 11:621-623
With the advances in light-emitting diodes (LED) efficiency over the last several years, solid-state lighting in the marketplace has grown significantly. This includes outdoor full colour displays, street and parking deck lighting, indoor lighting an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::627a79548d6c9dcb0d1dd084466a569f
https://doi.org/10.1002/pssc.201300458
https://doi.org/10.1002/pssc.201300458
Autor:
J. B. Lam, Jerzy S. Krasinski, T. Sugahara, S. K. Shee, J. J. Song, B. D. Little, Hua-Shuang Kong, Y. H. Kwon, G. E. Bulman, Gordon Gainer, Gil Han Park, S. Bidnyk, S.J. Hwang
Publikováno v:
physica status solidi (a). 183:105-109
We achieved low-threshold ultra-violet lasing in optically pumped GaN/AlGaN separate confinement heterostructures over a wide temperature range. Lasing modes of a single microcavity were examined from 20 to 300 K and gain mechanisms were compared to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7f79f0dd5c9e9c050b602f028adb46d
https://doi.org/10.1002/1521-396x(200101)183:1<105::aid-pssa105>3.0.co
https://doi.org/10.1002/1521-396x(200101)183:1<105::aid-pssa105>3.0.co
Autor:
D. Slater, D. Emerson, K. Doverspike, John A. Edmond, K. Haberern, G. E. Bulman, Hua-Shuang Kong, H. Dieringer
Publikováno v:
Materials Science Forum. :1477-1482
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01d905c0bea15470c08c8f6d8eae370c
https://doi.org/10.4028/www.scientific.net/msf.338-342.1477
https://doi.org/10.4028/www.scientific.net/msf.338-342.1477
Autor:
Ranbir Singh, M.F. Brady, Scott Allen, St. G. Müller, K. G. Irvine, D. Henshall, Hua-Shuang Kong, R.C. Glass, Valeri F. Tsvetkov, John W. Palmour, C.H. Carter, O. Kordina, John A. Edmond
Publikováno v:
Scopus-Elsevier
Silicon carbide technology has made tremendous strides in the last several years, with a variety of encouraging device and circuit demonstrations in addition to volume production of nitride-based blue LEDs being fabricated on SiC substrates. The comm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dedfbf0807da13d4f59b82498647db65
https://doi.org/10.1016/s0921-5107(98)00437-1
https://doi.org/10.1016/s0921-5107(98)00437-1
Publikováno v:
physica status solidi (a). 162:481-491
Silicon carbide has been used to fabricate a variety of short wavelength optoelectronic devices including blue LEDs, green LEDs and UV photodiodes. As a light emitter, 6H-SiC junctions can be tailored to emit light across the visible spectrum. The mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5551fdc1382cd1edb06cc52b589d0c85
https://doi.org/10.1002/1521-396x(199707)162:1<481::aid-pssa481>3.0.co
https://doi.org/10.1002/1521-396x(199707)162:1<481::aid-pssa481>3.0.co
Autor:
W. C. Hughes, W. H. Rowland, Mark Johnson, J. W. Cook, J. M. Zavada, M. Leonard, John A. Edmond, J. F. Schetzina, Hua-Shuang Kong
Publikováno v:
Journal of Crystal Growth. :72-78
GaN, AIGaN and InGaN films have been grown by molecular beam epitaxy (MBE) using RF plasma sources for the generation of active nitrogen. These films have been deposited homoepitaxially onto GaN/SiC substrates and hetero-epitaxially onto LiGaO 2 subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81e1753bf467a1fa4310000c3186261a
https://doi.org/10.1016/s0022-0248(96)01019-6
https://doi.org/10.1016/s0022-0248(96)01019-6
Autor:
E.V. Kalinina, G.F. Kholujanov, D. Tsvetkov, V.A. Soloviev, A. S. Zubrilov, V.D. Tretjakov, Vladimir A. Dmitriev, Hua-Shuang Kong, M.P. Vatnik
Publikováno v:
Materials Science and Engineering: B. 46:259-262
Electrical and luminescent characteristics of epitaxial 4H-SiC p-n junctions, both prior and after ion doping (ID) with Al, were studied. The implantation of Al ions was performed in the top p-layer of the epitaxial p-n structures. It was found that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42b321d4b5caa5dbd97bbd27e848e39b
https://doi.org/10.1016/s0921-5107(96)01988-5
https://doi.org/10.1016/s0921-5107(96)01988-5
Publikováno v:
Journal of Electronic Materials. 26:151-159
Synchrotron white beam x-ray topography (SWBXT) and Nomarski optical microscopy (NOM) have been used to characterize 4H-SiC epilayers and to study the character of triangular inclusions therein. 4H-SiC substrates misoriented by a range of angles from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e997bc1dc7f4ce951a5762ddc188a714
https://doi.org/10.1007/s11664-997-0142-4
https://doi.org/10.1007/s11664-997-0142-4
Publikováno v:
Physica B: Condensed Matter. 185:453-460
Single junction devices in silicon carbide have been developed for use as blue LEDs, UV photodiodes and high- temperature rectifiers. As a light emitter, 6H-SiC junctions can be tailored to emit light across the visible spectrum. The most widely comm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d732a9e9dce8a5e0d4531e4700f23519
https://doi.org/10.1016/0921-4526(93)90277-d
https://doi.org/10.1016/0921-4526(93)90277-d
Publikováno v:
Physica B: Condensed Matter. 185:461-465
A variety of devices with promising characteristics have recently been demonstrated in 6H-SiC. There are four primary application areas for 6H-SiC devices: (1) optoelectronics, (2) high-temperature electronics, (3) high-power/high- frequency devices,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78e76b5a5b31cef81e3a84bf62840003
https://doi.org/10.1016/0921-4526(93)90278-e
https://doi.org/10.1016/0921-4526(93)90278-e