Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Hua-Lun Ko"'
Autor:
Hua-Lun Ko, Quang Ho Luc, Ping Huang, Jing-Yuan Wu, Si-Meng Chen, Nhan-Ai Tran, Heng-Tung Hsu, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 188-191 (2022)
In this article, sub-10 nm top width nanowire In0.53Ga0.47As gate-all-around (GAA) MOSFETs with improved subthreshold characteristics and reliability are demonstrated. These devices exhibit a significant improvement in the subthreshold performances w
Externí odkaz:
https://doaj.org/article/199de25c50134018b5a6cabd58a3a820
Autor:
Hua-Lun Ko, Quang Ho Luc, Ping Huang, Si-Meng Chen, Jing-Yuan Wu, Nhan-Ai Tran, Edward Yi Chang
Publikováno v:
IEEE Transactions on Electron Devices. 69:4183-4187
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c4116e512f6f351a8bf1ac308c1e3b6
https://doi.org/10.1109/ted.2022.3181572
https://doi.org/10.1109/ted.2022.3181572
Autor:
Hua-Lun Ko, Quang Ho Luc, Ping Huang, Si-Meng Chen, Jing-Yuan Wu, Che-Wei Hsu, Nhan-Ai Tran, Edward Yi Chang
Publikováno v:
IEEE Transactions on Electron Devices. 69:495-499
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d870c642848f9522a76678f619a125f2
https://doi.org/10.1109/ted.2021.3133222
https://doi.org/10.1109/ted.2021.3133222
Autor:
Yan-Kui Liang, Jui-Sheng Wu, Edward Yi Chang, Chun-Jung Su, Hua-Lun Ko, Chun-Hsiung Lin, Chih-Yu Teng, Quang Ho Luc
Publikováno v:
IEEE Electron Device Letters. 42:1299-1302
In this letter, 5 nm-thick HZO ultra-thin ferroelectric capacitors with excellent remanent polarization ( $\text{P}_{\mathrm {r}}$ ) and reliability are presented. The TiN/HZO/TiN metal-ferroelectric-metal (MFM) capacitor stack was deposited consecut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e8439922a34b1ac1a0417bffc0f8e4d
https://doi.org/10.1109/led.2021.3102604
https://doi.org/10.1109/led.2021.3102604
Autor:
Jing-Yuan Wu, Ping Huang, Quang-Ho Luc, Hua-Lun Ko, Yung-Chun Chiang, Hsiang-Chan Yu, Nhan-Ai Tran, Mu-Yu Chen, Edward Yi Chang
Publikováno v:
Applied Physics Express. 16:041007
In this work, we present an inversion-mode In0.53Ga0.47As planar MOSFETs with current gain cutoff frequency (f T) = 275 GHz and maximum oscillation frequency (f max) = 75 GHz. To the best of our knowledge, this is the highest f T value among all the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32734fdd3f3bd425a50ba7197f64e133
https://doi.org/10.35848/1882-0786/acccd4
https://doi.org/10.35848/1882-0786/acccd4
Autor:
Deepak Anandan, Ching-Ting Lee, Hua Lun Ko, Ramesh Kumar Kakkerla, Edward Yi Chang, Sankalp Kumar Singh, Hung Wei Yu, Venkatesan Nagarajan
Publikováno v:
Journal of Crystal Growth. 522:30-36
In this work, the influence of V/III ratio on self-catalyzed InSb nanowire (NW) crystal structure is investigated using metal organic chemical vapor deposition. The effective balance of V/III ratio determines the change of InSb NW crystal structure f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d21ed97d254c90473bf379e318b6b5f
https://doi.org/10.1016/j.jcrysgro.2019.06.016
https://doi.org/10.1016/j.jcrysgro.2019.06.016
Autor:
Deepak Anandan, Hua Lun Ko, Ching-Ting Lee, Ramesh Kumar Kakkerla, Sankalp Kumar Singh, Hung Wei Yu, Edward Yi Chang, Venkatesan Nagarajan
Publikováno v:
Journal of Crystal Growth. 506:45-54
In this study, growth of Au-free InAs/InSb vertical heterostructure (HS) nanowires (NWs) on highly lattice mismatched Si (1 1 1) substrate by metal organic chemical vapor deposition (MOCVD) is demonstrated. Careful selections of InSb growth parameter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e35b093bca4252a0b3c14ae29888d311
https://doi.org/10.1016/j.jcrysgro.2018.09.046
https://doi.org/10.1016/j.jcrysgro.2018.09.046
Autor:
Edward Yi Chang, Hua Lun Ko, Sankalp Kumar Singh, Hung Wei Yu, Deepak Anandan, Venkatesan Nagarajan
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Integration of InGaAs/InAs nanowire on silicon (Si) substrate has been attracting huge attention for opto- and micro-electronics applications. In this work we report selective area epitaxy (SAE) of InGaAs/InAs heterostructure (HS) on Si (111) using m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51352688c15d411d2b38e63aa0f2f86a
https://doi.org/10.1109/vlsi-tsa51926.2021.9440134
https://doi.org/10.1109/vlsi-tsa51926.2021.9440134
Autor:
Ping Huang, Edward Yi Chang, Quang-Ho Luc, hua Lun Ko, Jing Yuan Wu, Che Wei Hsu, Nhan Ai Tran
Publikováno v:
ECS Meeting Abstracts. :3824-3824
In this work, we demonstrate a high-k/III-V gate stack interface treatment utilizing NH3/N2 in-situ remote plasma (RP). Through such treatment, the density of interface trap states (Dit) is dramatically reduced and the surface morphology of the Al2O3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03b1d57178176ce0631f38c80496c671
https://doi.org/10.1149/ma2020-02483824mtgabs
https://doi.org/10.1149/ma2020-02483824mtgabs
Autor:
Nhan Ai Tran, Hua Lun Ko, Ping Huang, Quang Ho Luc, Che-Wei Hsu, Jing Yuan Wu, Edward Yi Chang
Publikováno v:
ECS Meeting Abstracts. :3835-3835
Raising transistors density led by scaling is responsible for the increase of the power consumption. Consequently, the supply voltage scaling is a strong issue in recent years. Tunnel diode is considered as one of the potential candidate for low powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bfcd32b203e8a491d5e6dfe7e50a4f0
https://doi.org/10.1149/ma2020-02513835mtgabs
https://doi.org/10.1149/ma2020-02513835mtgabs