Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Hua-Ching Tong"'
Publikováno v:
Journal of Magnetism and Magnetic Materials. 239:106-111
A dual spin valve head with synthetic antiferromagnetic pinned layers, DSSV, consists of a reader and a writer. The key fundamental concept of the magnetic materials for the reader and the writer of the DSSV will be discussed in this paper. The reade
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87279a16958b0056704f629f6e98e447
https://doi.org/10.1016/s0304-8853(01)00585-6
https://doi.org/10.1016/s0304-8853(01)00585-6
Autor:
S. Dey, S.S. Malhotra, Brij B. Lal, Francis H. Liu, Michael A. Russak, M. Schultz, Hua-Ching Tong, J. Kimmal, Kroum S. Stoev, S. Shi
Publikováno v:
IEEE Transactions on Magnetics. 36:2143-2147
A 26.5 Gb/in/sup 2/ areal-density demonstration was made using low-noise, thermally stable media and advanced dual-spin-valve heads. The demonstration was achieved at a linear density of 504 kbpi, a track density of 52.6 ktpi, and a data transfer rat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::928f20b6dbcc479067fcfb1029e13877
https://doi.org/10.1109/20.908335
https://doi.org/10.1109/20.908335
Autor:
Q. Leng, M. Mao, S. Zhou, F. Liu, Z.W. Dong, C. Qian, J. Perlas, L. Miloslavsky, Xizeng Shi, R. Barr, Prakash Prabhu, Hua-Ching Tong, S. Dey, Shin Funada, Jian-Gang Zhu, X. Yan, M. Gibbons
Publikováno v:
IEEE Transactions on Magnetics. 35:2574-2579
We have designed and fabricated dual spin valve heads with synthetically pinned layers. They have excellent sensitivity. The read-back waveform has a small asymmetry and that is also insensitive to the bias current. The read gap length is of 0.14 /sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3e8e00fbf65ec208dd61a05b43f3acf
https://doi.org/10.1109/20.800895
https://doi.org/10.1109/20.800895
Publikováno v:
IEEE Transactions on Magnetics. 33:984-989
In this paper, we report a combined spin-stand measurement and micromagnetic simulation study on narrow track recording characteristics in thin film media. It is found that the onset recording density of nonlinear partial erasure is determined by int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cecb1e5cd12b70ef5401eac37532c83
https://doi.org/10.1109/20.560143
https://doi.org/10.1109/20.560143
Publikováno v:
IEEE Transactions on Magnetics. 38:2222-2224
Sputter-deposited high-moment materials were used in top and bottom poles of a writer that has a pedestal defined zero throat. The high moment materials used were FeRhN/CoZrCr laminated films with a B/sub s/ of 20.3 kG. In the top pole, the sputtered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d1cc0e6e284734be28aed5381005f2c
https://doi.org/10.1109/tmag.2002.802665
https://doi.org/10.1109/tmag.2002.802665
Publikováno v:
Journal of Applied Physics. 89:7359-7361
We investigated the feasibility of a spin-dependent tunneling (SDT) read head with a parallel hard bias. In this scheme, the longitudinal biasing to the free layer is provided by fringe fields from a hard magnet which is fabricated over or under the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0e6edc08940c48d56e8fb63a63ff35c
https://doi.org/10.1063/1.1361051
https://doi.org/10.1063/1.1361051
Publikováno v:
Journal of Applied Physics. 89:7003-7005
Tunneling magnetoresistance (TMR) films and devices were simulated to understand the response of the free layer with a parallel hard bias. In order to determine the effect of the granular hard bias material micromagnetic simulation was used to model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d5c493a61e8318214cc7feb8c2cde41
https://doi.org/10.1063/1.1355331
https://doi.org/10.1063/1.1355331
Publikováno v:
Journal of Applied Physics. 89:7362-7364
The effect of a dc stress voltage on the junction resistance and magnetoresistance (MR) of spin-dependent tunneling (SDT) junctions with naturally oxidized barriers was investigated. There is a threshold voltage at which irreversible resistance chang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::784c3f82514b479cb2c63d7d5d7cae24
https://doi.org/10.1063/1.1359228
https://doi.org/10.1063/1.1359228
Autor:
M. Miller, C. Qian, Ming Mao, Shin Funada, Hua-Ching Tong, L. Miloslavsky, C.-Y. Hung, T. Schneider
Publikováno v:
Journal of Applied Physics. 87:6618-6620
In this article, we report the magnetic properties of ultrathin (15–200 A) NiFe and CoFe films deposited using ion beam deposition techniques. They are symmetrically sandwiched between Ta, Cu, or Ta/Cu under and capping layers. NiFe and CoFe films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19ca0d579955c1321e29b6252a53e3d8
https://doi.org/10.1063/1.372789
https://doi.org/10.1063/1.372789
Publikováno v:
Journal of Applied Physics. 87:5055-5057
The spin flop of synthetic antiferromagnetic pinned layers (SAF), under a magnetic field has been theoretically predicted and recently reported [J. G. Zhu and Y. Zheng, IEEE Trans. Magn. 34, 1063 (1998); J. G. Zhu, IEEE Trans. Magn. 35, 655 (1999)].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::877c96c6c99daf571831d5599d837718
https://doi.org/10.1063/1.373246
https://doi.org/10.1063/1.373246