Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Hua-Ching Chien"'
Publikováno v:
Japanese Journal of Applied Physics. 46:6463-6468
The reliability characteristics of silicon–oxide–nitride–oxide–silicon (SONOS) devices with different thin tunnel oxides are studied. The device with the tunnel oxynitride grown in pure N2O ambient at a high temperature has better performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f240522bea790b2e0d8a224ecd2927b
https://doi.org/10.1143/jjap.46.6463
https://doi.org/10.1143/jjap.46.6463
Publikováno v:
Japanese Journal of Applied Physics. 46:2827-2830
A silicon nitride film is one of the most important factors for determining the trapping efficiency of nonvolatile silicon–oxide–nitride–oxide–silicon (SONOS) memory devices. In this work, we focus on the nitride-layer deposition at different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feaa4fbba87725948c1d53d9cc62ccf0
https://doi.org/10.1143/jjap.46.2827
https://doi.org/10.1143/jjap.46.2827
Publikováno v:
Microelectronic Engineering. 80:256-259
A novel film in the trapping layer of SONOS device has been proposed. With gradually changing Si/N content ratio, the nitrogen-rich in middle (NRM) nitride has better performance and reliability than a conventional standard Si3N4film. This new config
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aae35f7b6747bed4476cb97575f63cc2
https://doi.org/10.1016/j.mee.2005.04.077
https://doi.org/10.1016/j.mee.2005.04.077
Publikováno v:
IEEE Transactions on Electron Devices. 52:987-992
A unique, band-engineered, configuration of the charge-trapping layer in silicon-oxide-nitride-oxide-silicon (SONOS) devices is proposed for high-density Flash memory applications. In this paper, a varying Si-N ratio in modified silicon nitride is ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::832daad695bc7936bfd8bb9c42a0c58a
https://doi.org/10.1109/ted.2005.846347
https://doi.org/10.1109/ted.2005.846347
Autor:
Chien-Wei Liao, Chin-Hsing Kao, Chih-Yuan Lee, Tzung-Kuen Tsai, Min-i Yang, Chung-yu Chou, Jia-Lin Wu, Hua-Ching Chien
Publikováno v:
2006 IEEE International Integrated Reliability Workshop Final Report.
The reliability characteristics of polysilicon-oxide-nitride-oxide -silicon (SONOS) devices with different thin tunnel oxides are studied. The tunnel oxynitride growth in a pure N2O ambient with high temperature has better performance than in a dry o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f20facee36a1fb86b6e39defca59d7f
https://doi.org/10.1109/irws.2006.305248
https://doi.org/10.1109/irws.2006.305248
Autor:
Jui-Wen Chang, Ya-Chin King, Kuo-Hong Wu, Chao-Hsin Chien, Hua-Ching Chien, Tung-Sheng Chen, Chih-Chiang Chan, Kung-Hong Lee, Chin-Hsing Kao, Tzung-Kuen Tsai
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f065acb1925e1abea151750717224449
https://doi.org/10.7567/ssdm.2004.p10-5
https://doi.org/10.7567/ssdm.2004.p10-5
Autor:
Jia-Lin Wu, Chin-Hsing Kao, Hua-Ching Chien, Tzung-Kuen Tsai, Chih-Yuan Lee, Chien-Wei Liao, Chung-Yu Chou, Min-I Yang
Publikováno v:
2006 IEEE International Integrated Reliability Workshop Final Report; 2006, p209-212, 4p
Autor:
Jia-Lin Wu, Hua-Ching Chien, Chien-Wei Liao, Cheng-Yen Wu, Chih-Yuan Lee, Houng-Chi Wei, Shih-Hsien Chen, Hann-Ping Hwang, Saysamone Pittikoun, Travis Cho, Chin-Hsing Kao
Publikováno v:
2006 IEEE International Workshop on Memory Technology, Design & Testing (MTDT'06); 2006, p84-84, 1p