Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Hua Yunan"'
Publikováno v:
International Journal of Electronics Letters. 10:209-218
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a6fc98a84647c53ecf57682310189cf
https://doi.org/10.1080/21681724.2021.1908604
https://doi.org/10.1080/21681724.2021.1908604
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 68:3148-3158
In this article, we present the analysis, design, and implementation of a wideband 10-W monolithic microwave integrated circuit power amplifier (PA), fabricated in a low-cost 0.1- $\mu \text{m}$ gallium nitride (GaN) on Si technology. The design is f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::debc1e59325a5b85040399d1295aeb4a
https://doi.org/10.1109/tmtt.2020.2993579
https://doi.org/10.1109/tmtt.2020.2993579
Publikováno v:
2020 IEEE Asia-Pacific Microwave Conference (APMC).
An ultra-wideband high-gain 10-W GaN power amplifier based on a 0.1-$\mu$m GaN HEMT process is illustrated in this paper. In order to achieve high power and high efficiency simultaneously, the triple-stacked GaN transistors are employed in a non-unif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59806873c6dc6b6a951169ccdb68aee7
https://doi.org/10.1109/apmc47863.2020.9331425
https://doi.org/10.1109/apmc47863.2020.9331425
Publikováno v:
2019 IEEE 4th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC).
A 0.5–7 GHz power amplifier (PA) is designed and fabricated in a 0.15 μm GaAs pHEMT process in this paper. To achieve a broadband power performance, this PA implements a nonuniform distributed amplifier configuration with four amplifying cells. Me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8be3f0d9695aa387bdcca29b6f5ffeb7
https://doi.org/10.1109/iaeac47372.2019.8997602
https://doi.org/10.1109/iaeac47372.2019.8997602
Autor:
Ji-Ping Lv, Liu-Lin Hu, Qian Lin, Wang Cetian, Yi-Jun Cheng, Cheng-jv Liao, Haipeng Fu, Liao Xuejie, Wu Haifeng, Tong Wei, Hua Yunan
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 66:3306-3314
The design and implementation of a GaN stacked distributed 2–19GHz monolithic microwave integrated circuit (MMIC) power amplifier (PA) is presented in this paper. The PA architecture uses six distributed cells, each containing a stack of three tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::804f8ff32580f0b36385f9f9cdc9d7a7
https://doi.org/10.1109/tmtt.2018.2828434
https://doi.org/10.1109/tmtt.2018.2828434
Autor:
Wang Cetian, Yi-Jun Chen, Ji-Ping Lv, Liu-Lin Hu, Tong Wei, Liao Xuejie, Hua Yunan, Wu Haifeng
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
A 4–10 GHz fully-integrated power amplifier (PA) is demonstrated using a 0.15-μm GaAs pHEMT process. This PA employs a compact structure with 4-parallel 3-stacked-FET cells to obtain a broadband power performance within a very small chip size. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca85d5db6b9dcdfdc365909dd6e9484b
https://doi.org/10.1109/mwsym.2017.8059091
https://doi.org/10.1109/mwsym.2017.8059091
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