Zobrazeno 1 - 10
of 178
pro vyhledávání: '"Hua, Mengyuan"'
Autor:
Zhao, Junlei, Fernández, Javier García, Azarov, Alexander, He, Ru, Prytz, Øystein, Nordlund, Kai, Hua, Mengyuan, Djurabekova, Flyura, Kuznetsov, Andrej
Disordering of solids typically leads to amorphization, but polymorph transitions, facilitated by favorable atomic rearrangements, may temporarily help to maintain long-range periodicity in the solid state. In far-from-equilibrium situations, such as
Externí odkaz:
http://arxiv.org/abs/2401.07675
Publikováno v:
Appl. Phys. Lett. 124, 022102 (2024)
$\beta$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ has gained intensive interests of research and application as an ultrawide bandgap semiconductor. Epitaxial growth technique of the $\beta$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ thin film possesses a fundamental and
Externí odkaz:
http://arxiv.org/abs/2309.09629
Autor:
Zhao, Junlei, Byggmästar, Jesper, He, Huan, Nordlund, Kai, Djurabekova, Flyura, Hua, Mengyuan
Publikováno v:
npj Computational Materials 9, 159 (2023)
$\mathrm{Ga}_{2}\mathrm{O}_{3}$ is a wide-bandgap semiconductor of emergent importance for applications in electronics and optoelectronics. However, vital information of the properties of complex coexisting $\mathrm{Ga}_{2}\mathrm{O}_{3}$ polymorphs
Externí odkaz:
http://arxiv.org/abs/2212.03096
Autor:
Chen, Junting, Zhao, Junlei, Feng, Sirui, Zhang, Li, Cheng, Yan, Liao, Hang, Zheng, Zheyang, Chen, Xiaolong, Gao, Zhen, Chen, Kevin J., Hua, Mengyuan
Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN surface has been a critical restriction that hinders the development of G
Externí odkaz:
http://arxiv.org/abs/2209.13826
Two-dimensional (2D) van der Waals (vdW) materials and their bilayers have stimulated enormous interests in fundamental researches and technological applications. Recently, a group of 2D vdW III2-VI3 materials with out-of-plane ferroelectricity have
Externí odkaz:
http://arxiv.org/abs/2112.05569
Publikováno v:
In Computers and Electrical Engineering August 2024 118 Part A
Autor:
Cai, Xiangbin, Wu, Zefei, Han, Xu, Xu, Shuigang, Lin, Jiangxiazi, Han, Tianyi, He, Pingge, Feng, Xuemeng, An, Liheng, Shi, Run, Wang, Jingwei, Ying, Zhehan, Cai, Yuan, Hua, Mengyuan, Liu, Junwei, Pan, Ding, Cheng, Chun, Wang, Ning
Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices f
Externí odkaz:
http://arxiv.org/abs/2107.00444
Autor:
Zhang, Yongjie, Tang, Jin, Liang, Shaoxiang, Zhao, Junlei, Hua, Mengyuan, Zhang, Chun, Deng, Hui
Publikováno v:
In International Journal of Machine Tools and Manufacture March 2024 196
Autor:
Zhao, Junlei, Byggmastar, Jesper, Zhang, Zhaofu, Djurabekova, Flyura, Nordlund, Kai, Hua, Mengyuan
Publikováno v:
Phys. Rev. B 104, 054107 (2021)
Ga2O3 is a wide-band-gap semiconductor of great interest for applications in electronics and optoelectronics. Two-dimensional (2D) Ga2O3 synthesized from top-down or bottom-up processes can reveal brand new heterogeneous structures and promising appl
Externí odkaz:
http://arxiv.org/abs/2105.12943
Autor:
Lin, Xinpeng, Zhu, Yumeng, Qi, Yongle, Zhou, Guangnan, Li, Wenmao, Jiang, Yang, Zhang, Jian, Sokolovskj, Robert, Jiang, Yulong, Guangrui, Xia, Hua, Mengyuan, Yu, Hongyu
In this paper, we report the use of lanthanum (La) in S/D contacts of GaN HEMTs, achieving 0.97 Ohm-mm contact resistance without S/D recess. The HEMTs show well-behaved electrical characteristics and satisfactory reliability. Our studies show that L
Externí odkaz:
http://arxiv.org/abs/1902.00227