Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Hu Shaojian"'
Autor:
He, Chang, Xin, Yue, Yang, Longfei, Wang, Zewei, Tang, Zhidong, Luo, Xin, Chen, Renhe, Wang, Zirui, Kong, Shuai, Wang, Jianli, Tang, Jianshi, Kang, Xiaoxu, Chen, Shoumian, Zhao, Yuhang, Hu, Shaojian, Kou, Xufeng
We report the design-technology co-optimization (DTCO) scheme to develop a 28-nm cryogenic CMOS (Cryo-CMOS) technology for high-performance computing (HPC). The precise adjustment of halo implants manages to compensate the threshold voltage (VTH) shi
Externí odkaz:
http://arxiv.org/abs/2411.03099
Autor:
Tang, Zhidong, Wang, Zewei, Yuan, Yumeng, He, Chang, Luo, Xin, Guo, Ao, Chen, Renhe, Hu, Yongqi, Yang, Longfei, Cao, Chengwei, Liu, Linlin, Yu, Liujiang, Shang, Ganbing, Cao, Yongfeng, Chen, Shoumian, Zhao, Yuhang, Hu, Shaojian, Kou, Xufeng
This paper outlines the establishment of a generic cryogenic CMOS database in which key electrical parameters and transfer characteristics of the MOSFETs are quantified as functions of device size, temperature/frequency responses. Meanwhile, comprehe
Externí odkaz:
http://arxiv.org/abs/2211.05309
Publikováno v:
In Journal of Molecular Liquids 15 September 2024 410
Autor:
Sun Lijie, Li Xiaojin, Shi Yanling, Guo Ao, Liu Linlin, Hu Shaojian, Chen Shoumian, Zhao Yuhang, Shang Ganbing, Cheng Jia, Ding Lin
Publikováno v:
MATEC Web of Conferences, Vol 22, p 02023 (2015)
In this paper, the SPICE model of poly resistor is accurately developed based on silicon data. To describe the non-linear R-V trend, the new correlation in temperature and voltage is found in non-silicide poly-silicon resistor. A scalable model is de
Externí odkaz:
https://doaj.org/article/607b281c3488422192ef19f3e0b8314a
Publikováno v:
In Chemical Engineering Research and Design January 2021 165:51-60
Autor:
Hu, Shaojian, Zhu, Jianhua, Wu, Bencheng, Ma, Rui, Chang, Yuechun, Li, Xiaohui, Wei, Yuqing, Yu, Liujie
Publikováno v:
In Fuel 15 August 2020 274
Publikováno v:
In Microporous and Mesoporous Materials 15 May 2018 262:112-121
Autor:
Zeng, Yan, Li, XiaoJin, Wang, Yanling, Sun, Yabin, Shi, YanLing, Guo, Ao, Hu, ShaoJian, Chen, Shoumian, Zhao, Yuhang
Publikováno v:
In Microelectronics Reliability August 2017 75:20-26
Akademický článek
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Autor:
Wang, YanLing, Li, XiaoJin, Qing, Jian, Zeng, Yan, Shi, YanLing, Guo, Ao, Hu, ShaoJian, Chen, Shoumian, Zhao, Yuhang
Publikováno v:
In Microelectronics Reliability November 2016 66:10-15