Zobrazeno 1 - 10
of 346
pro vyhledávání: '"Hu, Yiran"'
Autor:
Su, Weihang, Hu, Yiran, Xie, Anzhe, Ai, Qingyao, Que, Zibing, Zheng, Ning, Liu, Yun, Shen, Weixing, Liu, Yiqun
Statute retrieval aims to find relevant statutory articles for specific queries. This process is the basis of a wide range of legal applications such as legal advice, automated judicial decisions, legal document drafting, etc. Existing statute retrie
Externí odkaz:
http://arxiv.org/abs/2406.15313
Unsupervised Real-Time Hallucination Detection based on the Internal States of Large Language Models
Hallucinations in large language models (LLMs) refer to the phenomenon of LLMs producing responses that are coherent yet factually inaccurate. This issue undermines the effectiveness of LLMs in practical applications, necessitating research into dete
Externí odkaz:
http://arxiv.org/abs/2403.06448
Publikováno v:
CIKM 2023
Similar case retrieval (SCR) is a representative legal AI application that plays a pivotal role in promoting judicial fairness. However, existing SCR datasets only focus on the fact description section when judging the similarity between cases, ignor
Externí odkaz:
http://arxiv.org/abs/2310.15602
Autor:
Hu, Yiran
Geophysicists have studied 3D Quasi-Geostrophic systems extensively. These systems describe stratified flows in the atmosphere on a large time scale and are widely used for forecasting atmospheric circulation. They couple an inviscid transport equati
Externí odkaz:
http://arxiv.org/abs/2302.05973
Publikováno v:
In Nano Energy 15 June 2024 125
Publikováno v:
In Materials Today Communications March 2024 38
Autor:
Gigliotti, James, Li, Xin, Sundaram, Suresh, Deniz, Dogukan, Prudkovskiy, Vladimir, Turmaud, Jean-Philippe, Hu, Yiran, Hu, Yue, Fossard, Frédéric, Mérot, Jean-Sébastien, Loiseau, Annick, Patriarche, Gilles, Yoon, Bokwon, Landman, Uzi, Ougazzaden, Abdallah, Berger, Claire, de Heer, Walt A.
Publikováno v:
ACS Nano 2020, 14, 12962
Realizing high-performance nanoelectronics requires control of materials at the nanoscale. Methods to produce high quality epitaxial graphene (EG) nanostructures on silicon carbide are known. The next step is to grow Van der Waals semiconductors on t
Externí odkaz:
http://arxiv.org/abs/2011.11184
Autor:
Cao, Xiaole, Wei, Xuelian, Huo, Xiaoqing, Wang, Baocheng, Hu, Yiran, Wang, Zhong Lin, Wu, Zhiyi
Publikováno v:
In Chemical Engineering Journal 15 December 2023 478
Publikováno v:
In Polymer Degradation and Stability December 2023 218
Autor:
Prudkovskiy, Vladimir S., Hu, Yiran, Hu, Yue, Zhang, Kaimin, Ji, Peixuan, Nunn, Grant, Zhao, Jian, Shi, Chenqian, Tejeda, Antonio, Wander, David, De Cecco, Alessandro, Winkelmann, Clemens B., Jiang, Yuxuan, Zhao, Tianhao, Wakabayashi, Katsunori, Jiang, Zhigang, Ma, Lei, Berger, Claire, de Heer, Walt A.
Publikováno v:
Nature Communications (2022) 13, 7814
Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterne
Externí odkaz:
http://arxiv.org/abs/1910.03697