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Autor:
Li, Qinjin, Pan, Yanyan, Zhang, Jing, Hu, Boxu, Qin, Dan, Liu, Shenghui, Chen, Ning, Zhang, Lisheng
Publikováno v:
In iScience 15 March 2024 27(3)
Autor:
Hu, Boxue
After 60 years’ development, Silicon (Si) devices are approaching their performance limitations set by their own material properties. They have difficulties meeting requirements of future medium and high-voltage applications. Medium-voltage Silicon
