Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Hsun-Chih Tsao"'
Autor:
Hsun-Chih Tsao, 曹訓誌
93
The realistic world of video game is different from reality, it only provide reduced reality to players. This study focus on the viewing angle of racing video game, and try to understand how the viewing angle influence of the speed of moving,
The realistic world of video game is different from reality, it only provide reduced reality to players. This study focus on the viewing angle of racing video game, and try to understand how the viewing angle influence of the speed of moving,
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/53392937518152981864
Autor:
Jaw-Jung Shin, Fu-Jye Liang, Ming Lu, Li-Wei Kung, Fu-Liang Yang, Chien-Chao Huang, Hsun-Chih Tsao, Cheng-Kuo Wen, Jhon-Jhy Liaw, Ke-Wei Su, Yu-Jun Chou, Yi-Chun Huang, Yung-Shun Chen, Di-Hong Lee, Tze-Liang Lee, Shui-Ming Cheng, Samuel Fung, Chenming Hu, Bin-Chang Chang, Tang-Xuan Chung, Chuan-Ping Hou, Chang-Yun Chang, Tsai-Sheng Gau, Kuang-Hsin Chen, J.Y.-C. Sun, Cheng Chuan Huang, Hou-Yu Chen, Jan-Wen You, Liang Min-Chang, Jhi-cheng Lu, Chi-Chun Chen, Burn-Jeng Lin, Kuei-Shun Chen, Yee-Chia Yeo, Han-Jan Tao, J.H. Chen, Shih-Chang Chen, Hung-Wei Chen, Carlos H. Diaz, Yi-Ming Sheu, Chun-Kuang Chen, Bor-Wen Chan, Ying-Ho Chen, W. Chang, King-Chang Shu, C.H. Chen, Chii-Ming Wu, Cheng-hung Chang
Publikováno v:
Scopus-Elsevier
A 65 nm node strained SOI technology with high performance is demonstrated, providing drive currents of 1015 and 500 /spl mu/A//spl mu/m for N-FET and P-FET, respectively, at an off-state leakage of 40 nA//spl mu/m using 1 V operation. The technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2cd43133598ebbb8ca11a12eccb16a1
http://www.scopus.com/inward/record.url?eid=2-s2.0-17644444298&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-17644444298&partnerID=MN8TOARS