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pro vyhledávání: '"Hsueh-liang Huang"'
Autor:
Hsueh-liang Huang, 黃學良
101
The research discusses a novel CTFET inverter which is composed of a N-typed TFET(NTFET) as a driven transistor and a Gated control I-I-P transistor as a loaded transistor, and discusses its characteristic and analysis. We name it “CGTFET
The research discusses a novel CTFET inverter which is composed of a N-typed TFET(NTFET) as a driven transistor and a Gated control I-I-P transistor as a loaded transistor, and discusses its characteristic and analysis. We name it “CGTFET
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/33892294645698676292
Publikováno v:
Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture. 229:141-147
In this study, a simple two-dimensional measurement system based on optical design was developed to measure the motion errors of the linear guideway. Compared with the transitional methods about the linear guideway for measuring the motion errors, ou
Publikováno v:
Optics and Lasers in Engineering. 49:1045-1053
A laser-based measurement system for evaluation of the scraping workpiece quality that can eliminate contact-induced measurement errors and increase measurement accuracy is proposed. The laser-based measurement system comprises a light-scattering-typ
Publikováno v:
Optics and Lasers in Engineering. 48:1012-1018
Based on the theory of laser measurement, a novel laser-based system to measure the thread profile of ballscrew has been proposed, which integrates the triangulation laser measuring system and the dual-axis rotary stage. The proposed system is made o
Autor:
Shang-Liang Chen, Chien-Hung Liu, Wen-Yuh Jywe, Tung Hui Hsu, Hsueh Liang Huang, Yeau-Ren Jeng, Tung Hsien Hsieh, Ming-Shi Wang
Publikováno v:
Journal of the Chinese Institute of Engineers. 33:71-80
In this paper, a new optical 3‐dimensional vibrometer is presented. This system is composed of two orthogonally set up corner cubes (CC), a collimated laser source, two quadrant detectors (QD) and three beam‐splitters (BS). The corner cubes are d
Publikováno v:
Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture. 223:107-114
In this study, a high-resolution three-degrees-of-freedom (3-DOF) motion error measuring system based on interference is described. It can simultaneously measure the linear displacement and two angular errors of a single-axis linear moving platform.
Publikováno v:
The Review of scientific instruments. 85(3)
This work develops a machine for automatically measuring static/dynamic running parallelism for use in the linear guideway manufacturing industry. The automatic static/dynamic running parallelism measurement machine consists of a running parallelism
Autor:
I-Ching Chen, Wen-Yuh Jywe, Tung-Hui Hsu, Hsueh-Liang Huang, Yeau-Ren Jeng, Lili Duan, Ming-Shi Wang, Chien-Hung Liu, Yun-Feng Teng, Gerd Jäger, Hsin-Hung Jwo
Publikováno v:
tm - Technisches Messen. 76:245-247
In this paper, a dual-beam laser interferometer measurement system for precision machine tools was presented. The straightness measurement module and the angular measurement module were combined to form this measurement system such that the operation
Autor:
Wen-Yuh Jywe, Bor-Jeng Lin, Jing-Chung Shen, Jeng-Dao Lee, Hsueh-Liang Huang, Tung-Hsien Hsieh
In this study, a simple 2-D measurement system based on optical design was developed to measure the motion errors of the linear guideway. Compared with the transitional methods about the linear guideway for measuring the motion errors, our proposed 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::295150b5f3f2dd6d4446e86a39dbd10b
Autor:
Chen-Chi Tsai, You-Ren Lu, Kuan-Yu Chen, Po-Hsieh Lin, Hsueh-Liang Huang, Jyi-Tsong Lin, Shih-Wen Hsu
Publikováno v:
2013 13th International Workshop on Junction Technology (IWJT).
This paper presents a new CMOS inverter (CGTFET), which is composed of a Gated control IIP for load transistor (Gated-IIP) and a tunneling field effect transistor (TFET) for driven transistor. Based on the measurement data of Gated-IIP and TFET devic