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Autor:
Yao-Ching Ku, Chih-Ming Ke, Tsai-Sheng Gau, Tadashi Otaka, Hsueh-Liang Hung, Anderson Chang, Hiroki Kawada, Nelson Ren, Hiroaki Nomura, Jeng-Horng Chen, Kazuhiro Ueda, Burn Jeng Lin
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XVIII.
For 90 nm technology and below, we need to fight for every nanometer to improve the CD uniformity (CDU). New materials, especially for low-k material, bring about not only complicated integration challenges, but also new metrology difficulties such a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b0664356003c7d48a0925cd1a588a6c
https://doi.org/10.1117/12.536147
https://doi.org/10.1117/12.536147
