Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Hsueh-Chun Kang"'
Publikováno v:
IEEE Transactions on Electron Devices. 63:4218-4225
In this paper, the AlGaN/GaN high electron mobility transistors on a low resistivity Si substrate with the hybrid drain structure for RF applications are analyzed in detail, based on measurements, TCAD simulation, model extraction, and delay time cal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e47bb4d7f8cb33a0c14d3621b570da10
https://doi.org/10.1109/ted.2016.2605128
https://doi.org/10.1109/ted.2016.2605128
