Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Hsueh-Chih Tseng"'
Autor:
Hsueh-chih Tseng, 曾學志
102
In recent years, the requirement of nonvolatile memory has become more and more importance due to the rapid development of the portable electronic products. To increase the capacity of nonvolatile memory, the density per unit cell must be in
In recent years, the requirement of nonvolatile memory has become more and more importance due to the rapid development of the portable electronic products. To increase the capacity of nonvolatile memory, the density per unit cell must be in
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/ts6zxn
Autor:
Ying-Lang Wang, Ann-Kuo Chu, Simon M. Sze, Ting-Chang Chang, Kai-Hung Cheng, Jheng-Jie Huang, Ming-Jinn Tsai, Yu-Ting Chen, Hsueh-Chih Tseng, Fu-Yen Jian
Publikováno v:
Thin Solid Films. 529:389-393
This paper studies the effect of doping on BON-based resistive switching characteristics. Typical bipolar resistive switching behavior can be observed in Pt/BON/TiN and Pt/BON:Gd/TiN devices. The conductive path(s) of the Pt/BON/TiN is vacancy-domina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21420ff7ec5f2a11b29b8d649cf1f6b7
https://doi.org/10.1016/j.tsf.2012.09.031
https://doi.org/10.1016/j.tsf.2012.09.031
Autor:
Ting-Chang Chang, Jyun-Bao Yang, Yu-Ting Chen, Jheng-Jie Huang, Simon M. Sze, Ann-Kuo Chu, Hsueh-Chih Tseng, Shih-Ching Chen, Ming-Jinn Tsai, Po-Chun Yang
Publikováno v:
Thin Solid Films. 529:200-204
This study investigates bipolar resistance switching memory in a fabricated Pt/GaOx/TiN device. Gallium oxide sputtered in ambient Ar shows a change in resistance ratio of two orders of magnitude. The enhancement of resistance ratio is also observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cce05c2f10a498e2c91dfca4f2e2ffa
https://doi.org/10.1016/j.tsf.2012.10.026
https://doi.org/10.1016/j.tsf.2012.10.026
Autor:
Simon M. Sze, Yu-Ting Chen, Ann-Kuo Chu, Hsueh-Chih Tseng, Ting-Chang Chang, Jyun-Bao Yang, Po-Chun Yang, Jheng-Jie Huang, Ming-Jinn Tsai
Publikováno v:
Thin Solid Films. 528:26-30
In this study, the Pt/IGO/TiN resistance random access memory (ReRAM) is investigated by the fabrication of co-sputtering the Ga2O3 and In2O3 targets to form the InGaOx (IGO) film. The Pt/GaOx/TiN structure was fabricated as comparison device. In add
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d9ec89a2cc1f6aa8c0a566fa8d21388
https://doi.org/10.1016/j.tsf.2012.09.086
https://doi.org/10.1016/j.tsf.2012.09.086
Autor:
Yu-Ting Chen, Ting-Chang Chang, Ann-Kuo Chu, Simon M. Sze, Jyun-Bao Yang, Jheng-Jie Huang, Hsueh-Chih Tseng, Ming-Jinn Tsai, Po-Chun Yang
Publikováno v:
Thin Solid Films. 528:31-35
In this study, we fabricated and analyzed resistance switching characteristics for resistance random access memory (RRAM) in a Pt/In 2 O 3 /SiO 2 /TiN structure. By applying opposing electric fields to perform a soft breakdown of the In 2 O 3 /SiO 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d7ea657a36579be7a3cf3d14883b38c
https://doi.org/10.1016/j.tsf.2012.10.096
https://doi.org/10.1016/j.tsf.2012.10.096
Autor:
Jheng-Jie Huang, Po-Chun Yang, New-Jin Ho, Yu-Ting Chen, Ting-Chang Chang, Dershin Gan, Ming-Jinn Tsai, Hsueh-Chih Tseng, Hui-Chun Huang, Simon M. Sze
Publikováno v:
Thin Solid Films. 520:1656-1659
This paper studies the effects of both the positive and negative forming processes on the resistive switching characteristics of a Pt/Yb2O3/TiN RRAM device. The polarity of the forming process can determine the transition mechanism, either bipolar or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80193cf9cdd9776b18e6df392584a8f2
https://doi.org/10.1016/j.tsf.2011.07.026
https://doi.org/10.1016/j.tsf.2011.07.026
Autor:
Ann-Kuo Chu, Simon M. Sze, Jin-Cheng Zheng, Yu-Ting Chen, Jyun-Bao Yang, Ting-Chang Chang, Jheng-Jie Huang, Hsueh-Chih Tseng, Ming-Jinn Tsai, Ding-Hua Bao
Publikováno v:
IEEE Electron Device Letters. 35:909-911
This letter investigates various oxygen concentra- tions in indium oxide films which induce different resistance switching behaviors, including two self-compliance behaviors and a two-step set process. The accumulated oxygen ions produce an oxygen-ri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::679852824c74837d6a636f6efe97897b
https://doi.org/10.1109/led.2014.2336676
https://doi.org/10.1109/led.2014.2336676
Autor:
Sei-Wei Wu, Yu-Ting Chen, Jyun-Bao Yang, Ying-Lang Wang, Ting-Chang Chang, Simon M. Sze, Jheng-Jie Huang, Tzu-Ping Lin, Hsueh-Chih Tseng, Ming-Jinn Tsai, Yi-Chun Wu, Ann-Kuo Chu
Publikováno v:
IEEE Electron Device Letters. 34:858-860
This letter investigates self-compliance behavior for nonvolatile resistance random access memory using the indium tin oxide (ITO)/Gd:SiOx/TiN structure. Different current compliances in the electroforming process results in different trends in the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7ffe234c1173640a905cc1d11413d07
https://doi.org/10.1109/led.2013.2259135
https://doi.org/10.1109/led.2013.2259135
Autor:
Ann-Kuo Chu, Dershin Gan, Simon M. Sze, Yu-Ting Chen, Ming-Jinn Tsai, Jyun-Bao Yang, Hsueh-Chih Tseng, Jheng-Jie Huang, Po-Chun Yang, Ting-Chang Chang, Hui-Chun Huang
Publikováno v:
IEEE Electron Device Letters. 34:226-228
After high-temperature forming (HTF) and room-temperature forming treatments, the resistive switching behavior gets some improvements. The switching ratio is enhanced as the device undergoes the HTF process. Through the conduction mechanism analyses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3b509e48af9b87a4f7c4d30078c1259
https://doi.org/10.1109/led.2012.2232276
https://doi.org/10.1109/led.2012.2232276
Autor:
Po-Chun Yang, Ann-Kuo Chu, Shih-Ching Chen, Hsueh-Chih Tseng, S. M. Sze, Yu-Ting Chen, Jyun-Bao Yang, Jheng-Jie Huang, Ting-Chang Chang, Ming-Jinn Tsai
Publikováno v:
IEEE Electron Device Letters. 33:1387-1389
In this letter, we fabricated resistance random access memory in a Pt/GaOx/TiN structure with a bipolar resistance switching characteristic and a bistable resistance ratio of about two orders by I-V sweeping. In order to increase the oxygen ion quant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9d5a94b801d8b4a8b13e3c2cc83dc4f
https://doi.org/10.1109/led.2012.2206365
https://doi.org/10.1109/led.2012.2206365