Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hsuan-Meng Tsai"'
Publikováno v:
Materials, Vol 17, Iss 20, p 5011 (2024)
Both CuI and CuI:Zn semiconductor thin films, along with MSM-structured UV photodetectors, were prepared on flexible mica substrates at low temperature (150 °C) by a wet chemical method. The two CuI-based films exhibited a polycrystalline phase with
Externí odkaz:
https://doaj.org/article/9f2828f9f604422689cfdd786a4f6263
Publikováno v:
Materials, Vol 16, Iss 19, p 6389 (2023)
The Ga-doped Mg0.2Zn0.8O (GMZO) transparent semiconductor thin films were prepared using the sol-gel and spin-coating deposition technique. Changes in the microstructural features, optical parameters, and electrical characteristics of sol-gel-synthes
Externí odkaz:
https://doaj.org/article/087c816ef69b464c8c4f88c3184dbcec
Publikováno v:
Materials, Vol 15, Iss 22, p 8145 (2022)
Pure CuI and Zn-substituted CuI (CuI:Zn) semiconductor thin films, and metal-semiconductor-metal (MSM) photodetectors were fabricated on glass substrates by a low-temperature solution process. The influence of Zn substitution concentration (0–12 at
Externí odkaz:
https://doaj.org/article/de5d47c457884e7cb270eb6874bdf4f4
Publikováno v:
Crystals, Vol 12, Iss 5, p 746 (2022)
Transparent Ga and In co-doped ZnO (ZnO:Ga-In) semiconductor thin films were deposited on Corning glass substrates by the sol-gel spin-coating process. The ZnO:Ga-In thin films were used as the sensing layer of metal–semiconductor–metal (MSM)-typ
Externí odkaz:
https://doaj.org/article/6f3a4963523d4a18a7f4900e76cbd718
Publikováno v:
Materials Chemistry and Physics. 295:127143
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::102186911fe42274fa7eb756bfafb6ee
https://doi.org/10.1016/j.matchemphys.2022.127143
https://doi.org/10.1016/j.matchemphys.2022.127143
Publikováno v:
Physica B: Condensed Matter. 640:413970
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::954efdba198131a13dc28b17f1a3ca35
https://doi.org/10.1016/j.physb.2022.413970
https://doi.org/10.1016/j.physb.2022.413970