Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Hsiu-chih Chen"'
Autor:
Hsiu-Chih Chen, 陳秀枝
95
The advantage of exercise for dialysis patients has been widely appoven. This study was to verify the efficacy of home-based exercise program on physical fitness, bone mineral density, and fatigue among dialysis patients. This study was a qua
The advantage of exercise for dialysis patients has been widely appoven. This study was to verify the efficacy of home-based exercise program on physical fitness, bone mineral density, and fatigue among dialysis patients. This study was a qua
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/43825242076761514648
Autor:
Hsiu-chih Chen, 陳秀枝
95
Most of the Taiwanese aborigines who live in cities have been encountering difficulties in pursuing education and employment. Along with the impact of importing foreign labors and economic depression, the problem of unemployment has seriously
Most of the Taiwanese aborigines who live in cities have been encountering difficulties in pursuing education and employment. Along with the impact of importing foreign labors and economic depression, the problem of unemployment has seriously
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/86862824293263862918
Autor:
Hsiu-Chih Chen, 陳秀枝
93
Pain is the most common concern of many hospitalized elderly. A care plan based on individual nursing needs is crucial to address this concern. Through planning, nurses can organize their care with very specific goals. The widespread use of a
Pain is the most common concern of many hospitalized elderly. A care plan based on individual nursing needs is crucial to address this concern. Through planning, nurses can organize their care with very specific goals. The widespread use of a
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/70150555017547912744
Autor:
Hsiu-Chih Chen, 陳秀祉
87
Clusters having interstitial atoms continue to attract considerable attention because they exist novel structural features and bonding properties. Comparing with the numerous reports of encapsulating metal carbonyl clusters, the metal chalcog
Clusters having interstitial atoms continue to attract considerable attention because they exist novel structural features and bonding properties. Comparing with the numerous reports of encapsulating metal carbonyl clusters, the metal chalcog
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/73480373621524603330
Autor:
Guo-Wei Huang, Fu-Kuo Hsueh, Kun-Ming Chen, Bo-Yuan Chen, Chun Chi Chen, Chia-Sung Chiu, Hsiu-Chih Chen, Edward Yi Chang
Publikováno v:
IEEE Transactions on Electron Devices. 65:4225-4231
Analog and RF characteristics of power FinFET transistors with different drain-extension structures are investigated for microwave integrated circuit applications. The power FinFETs were designed based on the drain-extended MOSFET structure and fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72c431574aac5469b02c26be509574e1
https://doi.org/10.1109/ted.2018.2863748
https://doi.org/10.1109/ted.2018.2863748
Autor:
Ming-Hsuan Kao, Kun-Ming Chen, Yen-Cheng Chiu, Meng-Fan Chang, Kai-Shin Li, Guo-Wei Huang, Cheng-Xin Xue, Jia-Min Shieh, Bo-Yuan Chen, Chun-Ying Lee, Fu-Kuo Hsueh, Chien-Ting Wu, Chang-Hong Shen, Hsiu-Chih Chen, Wen-Hsien Huang, Kun-Lin Lin, Wen-Kuan Yeh, Chenming Hu
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
For the first time, below 400°C-fabricated gate-all-around (GAA) transistor fabrication process was demonstrated with monolithic computing-in-memory (CIM) circuit. Key enablers are plasma-assisted atomic layer etching (PA-ALE), plasma immersion ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a944a506da13ea96981ba27b339bb43
https://doi.org/10.1109/iedm19573.2019.8993628
https://doi.org/10.1109/iedm19573.2019.8993628
Autor:
Chih-Chao Yang, Peng Chen, Kai-Shin Li, Wen-Kuan Yeh, Hsiu-Chih Chen, Guo-Wei Huang, Jia-Min Shieh, Kun-Ming Chen, Wei-Hao Chen, Meng-Fan Chang, Srivatsa Srinivasa, Bo-Yuan Chen, Yung-Ning Tu, Chun-Ying Lee, Wen-Hsien Huang, Fu-Kuo Hsueh, Vijaykrishnan Narayanan, Chang-Hong Shen
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
For the first time, ultra-low power ferroelectric FinFET-based monolithic 3D+-IC technology was demonstrated for near memory computing (NMC) circuit. Key enablers are ICP-SiO 2 interfacial layer, doped hafnia ferroelectric gate dielectric layer (HfZr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::510b463b8c7721e7866f277640cf74ae
https://doi.org/10.1109/iedm.2018.8614697
https://doi.org/10.1109/iedm.2018.8614697
Autor:
Wen-Kuan Yeh, Min-Hung Lee, Pin-Guang Chen, Kai-Shin Li, Fu-Kuo Hsueh, Chun-Chi Chen, Yun-Jie Wei, Chenming Hu, Sayeef Salahuddin, Jia-Min Shieh, Tung-Yan Lai, Yi-Ju Chen, Hsiu-Chih Chen, Wen-Cheng Chiu, Yu-Fan Chiu, Bo-Wei Wu
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
In this work, we use thermal-ALD to prepare ferroelectric HfZrO 2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of I D . Lower thermal budget pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d9bed21def660b31e91bfbf9878e0fc
https://doi.org/10.1109/iedm.2018.8614521
https://doi.org/10.1109/iedm.2018.8614521
Autor:
Wei-Hao Chen, Tung-Ying Hsieh, Bo-Yuan Chen, Fu-Kuo Hsueh, Jia-Min Shieh, Meng-Fan Chang, Hsiu-Chih Chen, Wen-Hsien Huang, Chih-Chao Yang, Hsiao-Yun Chiu, Kai-Shin Li, Chang-Hong Shen, K. C. Hsu, Wen-Kuan Yeh
Publikováno v:
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
We report heterogeneously integrated sub-40nm epi-like monolithic 3DIC with vertical ReRAM and memory computing (NMC) circuit. High driving current multi-channel UTB-MOSFETs (3.3/1.4 mA$/\mu \mathrm {m}$ for N/P FETs) was realized by low thermal budg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd97ffe9731e7493ad02695afa71d908
https://doi.org/10.1109/s3s.2018.8640186
https://doi.org/10.1109/s3s.2018.8640186
Autor:
Guo-Wei Huang, Kun-Ming Chen, Meng-Fan Chang, Srivatsa Srinivasa, Wen-Hsien Huang, Vijaykrishnan Narayanan, Kang-Lung Wang, K. C. Hsu, Bo-Yuan Chen, Fu-Kuo Hsueh, Jia-Min Shieh, Ying-Tsan Tang, Chang-Hong Shen, Wei-Hao Chen, Hochul Lee, Nicholas Jao, Chih-Chao Yang, Hsiu-Chih Chen, Albert Lee, Hsiao-Yun Chiu, Wen-Kuan Yeh
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
This paper presents the first monolithic 3D vertical cross-tier computing-in-memory (CIM) SRAM cell fabricated using low cost TSV-free FinFET-based 3D+-IC technology. The 9T 3D CIM SRAM cell is able to compute NAND/AND, OR/NOR and XOR/XNOR operations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2919c26e36adb8de8e0ff52d85002970
https://doi.org/10.1109/iedm.2017.8268380
https://doi.org/10.1109/iedm.2017.8268380